Crucial Technology BLS4G4D240FSE.8FBD 4GB vs Samsung M393A2K40CB2-CTD 16GB

总分

Crucial Technology BLS4G4D240FSE.8FBD 4GB

Crucial Technology BLS4G4D240FSE.8FBD 4GB

总分

Samsung M393A2K40CB2-CTD 16GB

Samsung M393A2K40CB2-CTD 16GB

差异规格评论

差异

Crucial Technology BLS4G4D240FSE.8FBD 4GB

需要考虑的原因
Crucial Technology BLS4G4D240FSE.8FBD 4GB

报告一个错误

低于PassMark测试中的延时，ns

29 52

左右 44% 更低的延时
更快的读取速度，GB/s

16.9 10

测试中的平均数值
更快的写入速度，GB/s

12.0 7.3

测试中的平均数值

Samsung M393A2K40CB2-CTD 16GB

需要考虑的原因
Samsung M393A2K40CB2-CTD 16GB

报告一个错误

更高的内存带宽，mbps

21300 19200

左右 1.11 更高的带宽

规格

完整的技术规格清单

Crucial Technology BLS4G4D240FSE.8FBD 4GB

Samsung M393A2K40CB2-CTD 16GB

主要特点

存储器类型

DDR4 DDR4
PassMark中的延时，ns

29 52
读取速度，GB/s

16.9 10.0
写入速度，GB/s

12.0 7.3
内存带宽，mbps

19200 21300

Other

描述

PC4-19200, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16 18 20 PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
时序/时钟速度

15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

2601 2306

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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AMD AE34G2139U2 4GB

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SK Hynix GKE800UD102408-2133 8GB

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SK Hynix HYMP112U64CP8-Y5 1GB

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G Skill Intl F4-4000C17-8GVKB 8GB

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Samsung M393A2K40CB2-CTD 16GB

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Kingston KHX1600C9D3/4G 4GB

Kingston KHX1600C9D3/4G 4GB

Shanghai Kuxin Microelectronics Ltd NMSO480E82-2400 8GB

Shanghai Kuxin Microelectronics Ltd NMSO480E82-2400 8GB

Nanya Technology NT4GC72B4NA1NL-CG 4GB

Nanya Technology NT4GC72B4NA1NL-CG 4GB

Crucial Technology CT8G4SFS824A.C8FBD1 8GB

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Elpida EBJ17RG4EFWA-DJ-F 16GB

Elpida EBJ17RG4EFWA-DJ-F 16GB

Micron Technology 16ATF2G64AZ-2G6B1 16GB

Micron Technology 16ATF2G64AZ-2G6B1 16GB

Samsung M378B5773DH0-CH9 2GB

Samsung M378B5773DH0-CH9 2GB

G Skill Intl F4-3600C16-8GVKC 8GB

G Skill Intl F4-3600C16-8GVKC 8GB