Crucial Technology BLS4G4D240FSE.8FBD 4GB vs Samsung M474A1G43DB0-CPB 8GB

总分

Crucial Technology BLS4G4D240FSE.8FBD 4GB

Crucial Technology BLS4G4D240FSE.8FBD 4GB

总分

Samsung M474A1G43DB0-CPB 8GB

Samsung M474A1G43DB0-CPB 8GB

差异规格评论

差异

Crucial Technology BLS4G4D240FSE.8FBD 4GB

需要考虑的原因
Crucial Technology BLS4G4D240FSE.8FBD 4GB

报告一个错误

更快的读取速度，GB/s

16.9 9.7

测试中的平均数值
更快的写入速度，GB/s

12.0 6.8

测试中的平均数值
更高的内存带宽，mbps

19200 17000

左右 1.13% 更高的带宽

Samsung M474A1G43DB0-CPB 8GB

需要考虑的原因
Samsung M474A1G43DB0-CPB 8GB

报告一个错误

低于PassMark测试中的延时，ns

27 29

左右 -7% 更低的延时

规格

完整的技术规格清单

Crucial Technology BLS4G4D240FSE.8FBD 4GB

Samsung M474A1G43DB0-CPB 8GB

主要特点

存储器类型

DDR4 DDR4
PassMark中的延时，ns

29 27
读取速度，GB/s

16.9 9.7
写入速度，GB/s

12.0 6.8
内存带宽，mbps

19200 17000

Other

描述

PC4-19200, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16 18 20 PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
时序/时钟速度

15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

2601 1767

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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AMD R534G1601U1S-UO 4GB

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Corsair CMK16GX4M4C3000C16 4GB

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Corsair CMW64GX4M4E3200C16 16GB

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G Skill Intl F4-3600C16-16GTRGC 16GB

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Kingston HX318C10FK/4 4GB

Kingston HX318C10FK/4 4GB

G Skill Intl F4-3000C16-16GTRS 16GB

G Skill Intl F4-3000C16-16GTRS 16GB

SK Hynix HMT42GR7AFR4A-PB 16GB

SK Hynix HMT42GR7AFR4A-PB 16GB

Mushkin MR[A/B]4U360JNNM8G 8GB

Mushkin MR[A/B]4U360JNNM8G 8GB

Kingston KVR800D2N6/2G 2GB

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Micron Technology 4ATF51264HZ-2G3E1 4GB

Micron Technology 4ATF51264HZ-2G3E1 4GB