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Crucial Technology BLS4G4D240FSE.8FBD 4GB
Samsung V-GeN D4S8GL30A8TX5 8GB

Crucial Technology BLS4G4D240FSE.8FBD 4GB vs Samsung V-GeN D4S8GL30A8TX5 8GB

总分
star star star star star
Crucial Technology BLS4G4D240FSE.8FBD 4GB

Crucial Technology BLS4G4D240FSE.8FBD 4GB

总分
star star star star star
Samsung V-GeN D4S8GL30A8TX5 8GB

Samsung V-GeN D4S8GL30A8TX5 8GB

差异 规格 评论

差异

Crucial Technology BLS4G4D240FSE.8FBD 4GB 需要考虑的原因
Crucial Technology BLS4G4D240FSE.8FBD 4GB
报告一个错误
  • 更快的读取速度，GB/s
    16.9 left arrow 16.8
    测试中的平均数值
  • 更快的写入速度，GB/s
    12.0 left arrow 11.7
    测试中的平均数值
Samsung V-GeN D4S8GL30A8TX5 8GB 需要考虑的原因
Samsung V-GeN D4S8GL30A8TX5 8GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    23 left arrow 29
    左右 -26% 更低的延时

规格

完整的技术规格清单
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Samsung V-GeN D4S8GL30A8TX5 8GB
主要特点
  • 存储器类型
    DDR4 left arrow DDR4
  • PassMark中的延时，ns
    29 left arrow 23
  • 读取速度，GB/s
    16.9 left arrow 16.8
  • 写入速度，GB/s
    12.0 left arrow 11.7
  • 内存带宽，mbps
    19200 left arrow 19200
Other
  • 描述
    PC4-19200, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16 18 20 left arrow PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
  • 时序/时钟速度
    15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz left arrow 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
  • 排名PassMark (越多越好)
    2601 left arrow 3147

Crucial Technology BLS4G4D240FSE.8FBD 4GB RAM的比较

SK Hynix HMA81GS6CJR8N-VK 8GB
Crucial Technology BLS8G4D240FSCK.8FD 8GB

Samsung V-GeN D4S8GL30A8TX5 8GB RAM的比较

Samsung M378A1K43DB2-CTD 8GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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