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Crucial Technology BLS4G4D240FSE.8FBD 4GB
SK Hynix HMA451U7MFR8N-TF 4GB
比较
Crucial Technology BLS4G4D240FSE.8FBD 4GB vs SK Hynix HMA451U7MFR8N-TF 4GB
总分
Crucial Technology BLS4G4D240FSE.8FBD 4GB
总分
SK Hynix HMA451U7MFR8N-TF 4GB
差异
规格
评论
差异
需要考虑的原因
Crucial Technology BLS4G4D240FSE.8FBD 4GB
报告一个错误
低于PassMark测试中的延时,ns
29
32
左右 9% 更低的延时
更快的读取速度,GB/s
16.9
11.1
测试中的平均数值
更快的写入速度,GB/s
12.0
9.2
测试中的平均数值
更高的内存带宽,mbps
19200
17000
左右 1.13% 更高的带宽
需要考虑的原因
SK Hynix HMA451U7MFR8N-TF 4GB
报告一个错误
规格
完整的技术规格清单
Crucial Technology BLS4G4D240FSE.8FBD 4GB
SK Hynix HMA451U7MFR8N-TF 4GB
主要特点
存储器类型
DDR4
DDR4
PassMark中的延时,ns
29
32
读取速度,GB/s
16.9
11.1
写入速度,GB/s
12.0
9.2
内存带宽,mbps
19200
17000
Other
描述
PC4-19200, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16 18 20
PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16
时序/时钟速度
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)
2601
2449
Crucial Technology BLS4G4D240FSE.8FBD 4GB RAM的比较
SK Hynix HMA81GS6CJR8N-VK 8GB
Crucial Technology BLS8G4D240FSCK.8FD 8GB
SK Hynix HMA451U7MFR8N-TF 4GB RAM的比较
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
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Kingston 9905403-090.A01LF 4GB
Kingston KHX3000C16/16GX 16GB
AMD R538G1601U2S-UO 8GB
G Skill Intl F4-2800C18-8GRS 8GB
Samsung M3 78T3354BZ0-CCC 256MB
G Skill Intl F4-4000C19-16GTZR 16GB
Hynix Semiconductor (Hyundai Electronics) HMT41GS6MFR8A
G Skill Intl F4-3200C16-8GSXKB 8GB
Hexon Technology Pte Ltd HEXON 1GB
Kingston 9965589-033.D00G 8GB
Micron Technology 16JTF51264HZ-1G6M1 4GB
Patriot Memory (PDP Systems) PSD416G24002 16GB
G Skill Intl F3-14900CL8-4GBXM 4GB
Crucial Technology BLS8G4D240FSB.16FBD? 8GB
报告一个错误
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Bug description
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