Crucial Technology BLS4G4D240FSE.8FBD 4GB vs SK Hynix HMA82GR7AFR8N-VK 16GB

总分

Crucial Technology BLS4G4D240FSE.8FBD 4GB

Crucial Technology BLS4G4D240FSE.8FBD 4GB

总分

SK Hynix HMA82GR7AFR8N-VK 16GB

SK Hynix HMA82GR7AFR8N-VK 16GB

差异规格评论

差异

Crucial Technology BLS4G4D240FSE.8FBD 4GB

需要考虑的原因
Crucial Technology BLS4G4D240FSE.8FBD 4GB

报告一个错误

低于PassMark测试中的延时，ns

29 40

左右 28% 更低的延时
更快的读取速度，GB/s

16.9 9.1

测试中的平均数值
更快的写入速度，GB/s

12.0 6.3

测试中的平均数值

SK Hynix HMA82GR7AFR8N-VK 16GB

需要考虑的原因
SK Hynix HMA82GR7AFR8N-VK 16GB

报告一个错误

更高的内存带宽，mbps

21300 19200

左右 1.11 更高的带宽

规格

完整的技术规格清单

Crucial Technology BLS4G4D240FSE.8FBD 4GB

SK Hynix HMA82GR7AFR8N-VK 16GB

主要特点

存储器类型

DDR4 DDR4
PassMark中的延时，ns

29 40
读取速度，GB/s

16.9 9.1
写入速度，GB/s

12.0 6.3
内存带宽，mbps

19200 21300

Other

描述

PC4-19200, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16 18 20 PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
时序/时钟速度

15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

2601 1764

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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Samsung M378B5773DH0-CH9 2GB

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SanMax Technologies Inc. SMD4-U16G48HD1-29Y 16GB

Nanya Technology NT512T64U88B0BY-3C 512MB

Nanya Technology NT512T64U88B0BY-3C 512MB

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Kingston KF3200C16D4/32GX 32GB

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Samsung M395T2863QZ4-CF76 1GB

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Kingston 99U5474-028.A00LF 4GB

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SanMax Technologies Inc. SMD4-U4G28HA-21P 4GB