Crucial Technology BLS4G4D240FSE.8FBD 4GB vs SK Hynix HMA851U6DJR6N-XN 4GB

总分

Crucial Technology BLS4G4D240FSE.8FBD 4GB

Crucial Technology BLS4G4D240FSE.8FBD 4GB

总分

SK Hynix HMA851U6DJR6N-XN 4GB

SK Hynix HMA851U6DJR6N-XN 4GB

差异规格评论

差异

Crucial Technology BLS4G4D240FSE.8FBD 4GB

需要考虑的原因
Crucial Technology BLS4G4D240FSE.8FBD 4GB

报告一个错误

低于PassMark测试中的延时，ns

29 32

左右 9% 更低的延时
更快的读取速度，GB/s

16.9 15.9

测试中的平均数值
更快的写入速度，GB/s

12.0 10.6

测试中的平均数值

SK Hynix HMA851U6DJR6N-XN 4GB

需要考虑的原因
SK Hynix HMA851U6DJR6N-XN 4GB

报告一个错误

更高的内存带宽，mbps

25600 19200

左右 1.33 更高的带宽

规格

完整的技术规格清单

Crucial Technology BLS4G4D240FSE.8FBD 4GB

SK Hynix HMA851U6DJR6N-XN 4GB

主要特点

存储器类型

DDR4 DDR4
PassMark中的延时，ns

29 32
读取速度，GB/s

16.9 15.9
写入速度，GB/s

12.0 10.6
内存带宽，mbps

19200 25600

Other

描述

PC4-19200, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16 18 20 PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 24
时序/时钟速度

15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz 20-20-20, 22-22-22, 24-24-24 / 3200 MHz
排名PassMark (越多越好)

2601 2240

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

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Absolute Latency

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RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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Micron Technology 36ASF4G72LZ-2G3B1 32GB

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Samsung M471B5173QH0-YK0 4GB

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A-DATA Technology AD73I1C1674EV 4GB

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Patriot Memory (PDP Systems) PSD38G1600L2S 8GB

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Kingston 9965640-008.A01G 32GB

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Kingston 9965433-034.A00LF 4GB

Kingston 9965433-034.A00LF 4GB

Samsung V-GeN D4S8GL32A8TL 8GB

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Smart Modular SH564128FH8NZQNSCG 4GB

Smart Modular SH564128FH8NZQNSCG 4GB

Kingston KMKYF9-HYA 8GB

Kingston KMKYF9-HYA 8GB

Golden Empire 1GB DDR2 800 CAS=4 1GB

Golden Empire 1GB DDR2 800 CAS=4 1GB

Essencore Limited IM44GU48N21-FFFHM 4GB

Essencore Limited IM44GU48N21-FFFHM 4GB

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Micron Technology 18ASF2G72PDZ-2G6D1 16GB

Micron Technology 18ASF2G72PDZ-2G6D1 16GB