Crucial Technology BLS4G4D240FSE.8FBD 4GB vs V-Color Technology Inc. TL48G36S8KBNRGB18 8GB

总分

Crucial Technology BLS4G4D240FSE.8FBD 4GB

Crucial Technology BLS4G4D240FSE.8FBD 4GB

总分

V-Color Technology Inc. TL48G36S8KBNRGB18 8GB

V-Color Technology Inc. TL48G36S8KBNRGB18 8GB

差异规格评论

差异

Crucial Technology BLS4G4D240FSE.8FBD 4GB

需要考虑的原因
Crucial Technology BLS4G4D240FSE.8FBD 4GB

报告一个错误

低于PassMark测试中的延时，ns

29 48

左右 40% 更低的延时
更快的写入速度，GB/s

12.0 10.4

测试中的平均数值

V-Color Technology Inc. TL48G36S8KBNRGB18 8GB

需要考虑的原因
V-Color Technology Inc. TL48G36S8KBNRGB18 8GB

报告一个错误

更快的读取速度，GB/s

17 16.9

测试中的平均数值
更高的内存带宽，mbps

21300 19200

左右 1.11 更高的带宽

规格

完整的技术规格清单

Crucial Technology BLS4G4D240FSE.8FBD 4GB

V-Color Technology Inc. TL48G36S8KBNRGB18 8GB

主要特点

存储器类型

DDR4 DDR4
PassMark中的延时，ns

29 48
读取速度，GB/s

16.9 17.0
写入速度，GB/s

12.0 10.4
内存带宽，mbps

19200 21300

Other

描述

PC4-19200, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16 18 20 PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
时序/时钟速度

15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

2601 2366

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

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Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

Crucial Technology BLS4G4D240FSE.8FBD 4GB

Crucial Technology BLS4G4D240FSE.8FBD 4GB

V-Color Technology Inc. TL48G36S8KBNRGB18 8GB

V-Color Technology Inc. TL48G36S8KBNRGB18 8GB

Kingston 9905471-002.A00LF 2GB

Kingston 9905471-002.A00LF 2GB

Hynix Semiconductor (Hyundai Electronics) HMA82GU6CJR8N-VK 16GB

Hynix Semiconductor (Hyundai Electronics) HMA82GU6CJR8N

Kingston 9905403-156.A00LF 2GB

Kingston 9905403-156.A00LF 2GB

Apacer Technology 76.D305G.D390B 16GB

Apacer Technology 76.D305G.D390B 16GB

TwinMOS 8DPT5MK8-TATP 2GB

TwinMOS 8DPT5MK8-TATP 2GB

Ramsta Ramsta-2400Mhz-4G 4GB

Ramsta Ramsta-2400Mhz-4G 4GB

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

SK Hynix HMA851S6CJR6N-UH 4GB

SK Hynix HMA851S6CJR6N-UH 4GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO10240

Samsung M474A1G43EB1-CRC 8GB

Samsung M474A1G43EB1-CRC 8GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO10240

Essencore Limited IM48GU88N24-FFFHMB 8GB

Essencore Limited IM48GU88N24-FFFHMB 8GB

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

Mushkin 99[2/7/4]205F 8GB

Mushkin 99[2/7/4]205F 8GB

Patriot Memory (PDP Systems) 1866 CL9 Series 4GB

Patriot Memory (PDP Systems) 1866 CL9 Series 4GB

Avexir Technologies Corporation DDR4-3600 CL17 8GB 8GB

Avexir Technologies Corporation DDR4-3600 CL17 8GB 8GB

Hynix Semiconductor (Hyundai Electronics) HMT41GS6MFR8A-PB 8GB

Hynix Semiconductor (Hyundai Electronics) HMT41GS6MFR8A

A-DATA Technology AO2P24HCST2-BTCS 16GB

A-DATA Technology AO2P24HCST2-BTCS 16GB

Kingston 9905403-011.A03LF 2GB

Kingston 9905403-011.A03LF 2GB

Micron Technology TEAMGROUP-UD4-2133 16GB

Micron Technology TEAMGROUP-UD4-2133 16GB

Crucial Technology BLS4G4D240FSE.8FBD 4GB

Crucial Technology BLS4G4D240FSE.8FBD 4GB

Micron Technology 4ATF51264HZ-2G3B2 4GB

Micron Technology 4ATF51264HZ-2G3B2 4GB

Kreton Corporation 51624xxxx68x35xxxx 2GB

Kreton Corporation 51624xxxx68x35xxxx 2GB

Micron Technology MTA8ATF1G64HZ-2G3B1 16GB

Micron Technology MTA8ATF1G64HZ-2G3B1 16GB

Crucial Technology BLS4G4D240FSE.8FBD 4GB

Crucial Technology BLS4G4D240FSE.8FBD 4GB

Kingston CBD24D4S7D8ME-16 16GB

Kingston CBD24D4S7D8ME-16 16GB