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Crucial Technology BLS4G4D240FSE.M8FADM 4GB
Corsair CM4X16GE2666C18S4 16GB
比较
Crucial Technology BLS4G4D240FSE.M8FADM 4GB vs Corsair CM4X16GE2666C18S4 16GB
总分
Crucial Technology BLS4G4D240FSE.M8FADM 4GB
总分
Corsair CM4X16GE2666C18S4 16GB
差异
规格
评论
差异
需要考虑的原因
Crucial Technology BLS4G4D240FSE.M8FADM 4GB
报告一个错误
低于PassMark测试中的延时,ns
24
32
左右 25% 更低的延时
需要考虑的原因
Corsair CM4X16GE2666C18S4 16GB
报告一个错误
更快的读取速度,GB/s
16.4
15.5
测试中的平均数值
更快的写入速度,GB/s
13.2
11.0
测试中的平均数值
更高的内存带宽,mbps
21300
19200
左右 1.11 更高的带宽
规格
完整的技术规格清单
Crucial Technology BLS4G4D240FSE.M8FADM 4GB
Corsair CM4X16GE2666C18S4 16GB
主要特点
存储器类型
DDR4
DDR4
PassMark中的延时,ns
24
32
读取速度,GB/s
15.5
16.4
写入速度,GB/s
11.0
13.2
内存带宽,mbps
19200
21300
Other
描述
PC4-19200, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16 18 20
PC4-21300, 1.2V, CAS Supported: 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24
时序/时钟速度
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)
2445
3226
Crucial Technology BLS4G4D240FSE.M8FADM 4GB RAM的比较
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Corsair CM4X16GE2666C18S4 16GB RAM的比较
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
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Kingston 99U5702-101.A00G 8GB
Elpida EBJ21EE8BDFA-DJ-F 2GB
SK Hynix HMT351S6AFR8C-G7 4GB
SK Hynix HYMP112U64CP8-S5 1GB
SK Hynix HMA41GR7AFR4N-TF 8GB
Crucial Technology CT51264BA1339.C16F 4GB
Crucial Technology BLE8G4D34AEEAK.K8FB 8GB
Samsung M471B5173QH0-YK0 4GB
G Skill Intl F4-2400C16-4GRS 4GB
Ramos Technology EWB8GB681CA3-16IC 8GB
Transcend Information JM2400HSB-8G 8GB
Elpida EBJ41UF8BDU5-GN-F 4GB
Samsung M471A2K43DB1-CTD 16GB
报告一个错误
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Bug description
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