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Crucial Technology BLS4G4D240FSE.M8FADM 4GB
Corsair CM4X8GE3000C15K4 8GB
比较
Crucial Technology BLS4G4D240FSE.M8FADM 4GB vs Corsair CM4X8GE3000C15K4 8GB
总分
Crucial Technology BLS4G4D240FSE.M8FADM 4GB
总分
Corsair CM4X8GE3000C15K4 8GB
差异
规格
评论
差异
需要考虑的原因
Crucial Technology BLS4G4D240FSE.M8FADM 4GB
报告一个错误
低于PassMark测试中的延时,ns
24
28
左右 14% 更低的延时
更高的内存带宽,mbps
19200
17000
左右 1.13% 更高的带宽
需要考虑的原因
Corsair CM4X8GE3000C15K4 8GB
报告一个错误
更快的读取速度,GB/s
18.3
15.5
测试中的平均数值
更快的写入速度,GB/s
14.3
11.0
测试中的平均数值
规格
完整的技术规格清单
Crucial Technology BLS4G4D240FSE.M8FADM 4GB
Corsair CM4X8GE3000C15K4 8GB
主要特点
存储器类型
DDR4
DDR4
PassMark中的延时,ns
24
28
读取速度,GB/s
15.5
18.3
写入速度,GB/s
11.0
14.3
内存带宽,mbps
19200
17000
Other
描述
PC4-19200, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16 18 20
PC4-17000, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16
时序/时钟速度
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)
2445
3377
Crucial Technology BLS4G4D240FSE.M8FADM 4GB RAM的比较
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Corsair CM4X8GE3000C15K4 8GB RAM的比较
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
A-DATA Technology DQVE1908 512MB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
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Kingston KHX3200C18D4/8G 8GB
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Kingston 99U5584-001.A00LF 4GB
Samsung M378A1G44BB0-CWE 8GB
Nanya Technology NT4GC72B4NA1NL-CG 4GB
Crucial Technology CT16G4SFD824A.M16FE 16GB
AMD R5S38G1601U2S 8GB
ISD Technology Limited KD48GU880-32A160X 8GB
Kingston K1N7HK-ELC 2GB
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A-DATA Technology ADOVE1A0834E 1GB
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Kingston 99U5403-036.A00G 4GB
Crucial Technology BLS16G4D240FSC.16FBR 16GB
PNY Electronics PNY 2GB
Samsung M471A1K43EB1-CWE 8GB
Nanya Technology M2N1G64TUH8D5F-AC 1GB
Kingston KHX3000C16/16GX 16GB
Kingston KHX3200C18D4/8G 8GB
G Skill Intl F4-3600C19-16GTRG 16GB
报告一个错误
×
Bug description
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