Crucial Technology BLS4G4D240FSE.M8FADM 4GB vs Corsair CMWB8G1L2666A16W4 8GB

总分

Crucial Technology BLS4G4D240FSE.M8FADM 4GB

Crucial Technology BLS4G4D240FSE.M8FADM 4GB

总分

Corsair CMWB8G1L2666A16W4 8GB

Corsair CMWB8G1L2666A16W4 8GB

差异规格评论

差异

Crucial Technology BLS4G4D240FSE.M8FADM 4GB

需要考虑的原因
Crucial Technology BLS4G4D240FSE.M8FADM 4GB

报告一个错误

Corsair CMWB8G1L2666A16W4 8GB

需要考虑的原因
Corsair CMWB8G1L2666A16W4 8GB

报告一个错误

低于PassMark测试中的延时，ns

22 24

左右 -9% 更低的延时
更快的读取速度，GB/s

17.8 15.5

测试中的平均数值
更快的写入速度，GB/s

13.4 11.0

测试中的平均数值
更高的内存带宽，mbps

21300 19200

左右 1.11 更高的带宽

规格

完整的技术规格清单

Crucial Technology BLS4G4D240FSE.M8FADM 4GB

Corsair CMWB8G1L2666A16W4 8GB

主要特点

存储器类型

DDR4 DDR4
PassMark中的延时，ns

24 22
读取速度，GB/s

15.5 17.8
写入速度，GB/s

11.0 13.4
内存带宽，mbps

19200 21300

Other

描述

PC4-19200, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16 18 20 PC4-21300, 1.2V, CAS Supported: 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24
时序/时钟速度

15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

2445 3036

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Samsung DDR3 8GB 1600MHz 8GB

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Micron Technology 18ADF2G72AZ-2G3B1 16GB

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SK Hynix HMA82GS6CJR8N-VK 16GB

SK Hynix HMA82GS6CJR8N-VK 16GB

Samsung M393A4K40BB0-CPB 32GB

Samsung M393A4K40BB0-CPB 32GB