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Crucial Technology BLS4G4D240FSE.M8FADM 4GB
G Skill Intl F4-4000C18-8GTZKK 8GB
比较
Crucial Technology BLS4G4D240FSE.M8FADM 4GB vs G Skill Intl F4-4000C18-8GTZKK 8GB
总分
Crucial Technology BLS4G4D240FSE.M8FADM 4GB
总分
G Skill Intl F4-4000C18-8GTZKK 8GB
差异
规格
评论
差异
需要考虑的原因
Crucial Technology BLS4G4D240FSE.M8FADM 4GB
报告一个错误
低于PassMark测试中的延时,ns
24
30
左右 20% 更低的延时
更快的读取速度,GB/s
15.5
11.5
测试中的平均数值
更快的写入速度,GB/s
11.0
10.8
测试中的平均数值
更高的内存带宽,mbps
19200
17000
左右 1.13% 更高的带宽
需要考虑的原因
G Skill Intl F4-4000C18-8GTZKK 8GB
报告一个错误
规格
完整的技术规格清单
Crucial Technology BLS4G4D240FSE.M8FADM 4GB
G Skill Intl F4-4000C18-8GTZKK 8GB
主要特点
存储器类型
DDR4
DDR4
PassMark中的延时,ns
24
30
读取速度,GB/s
15.5
11.5
写入速度,GB/s
11.0
10.8
内存带宽,mbps
19200
17000
Other
描述
PC4-19200, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16 18 20
PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
时序/时钟速度
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)
2445
2462
Crucial Technology BLS4G4D240FSE.M8FADM 4GB RAM的比较
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
G Skill Intl F4-4000C18-8GTZKK 8GB RAM的比较
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
Wilk Elektronik S.A. GR1333D364L9/4G 4GB
Wilk Elektronik S.A. IRP3600D4V64L17/16G 16GB
Samsung M393B1K70QB0-CK0 8GB
Maxsun MSD44G24Q3 4GB
AMD AE34G1601U1 4GB
G Skill Intl F4-4400C17-8GVK 8GB
Samsung M378B5273DH0-CH9 4GB
Essencore Limited IM48GU88N24-FFFHA0 8GB
A-DATA Technology VDQVE1B16 2GB
G Skill Intl F4-3000C15-8GVS 8GB
Samsung M393B2G70BH0-CK0 16GB
SK Hynix HMA851U6JJR6N-VK 4GB
AMD R5S38G1601U2S 8GB
Mushkin MB[A/B]4U240FFFF16G 16GB
Samsung M378B5673EH1-CF8 2GB
Corsair CMK64GX4M4D3000C16 16GB
Samsung M3 78T2953EZ3-CF7 1GB
Avexir Technologies Corporation DDR4-3000 CL16 8GB 8GB
Crucial Technology CT25664AA800.M16FM 2GB
Kingmax Semiconductor GLAF62F-D8---------- 4GB
Nanya Technology NT2GT64U8HD0BY-AD 2GB
Micron Technology 18ADF2G72PZ-2G3B1 16GB
A-DATA Technology DQKD1A08 1GB
SK Hynix HMA451U7MFR8N-TF 4GB
Samsung M471B5173QH0-YK0 4GB
Kingston 9905678-110.A00G 8GB
Kingston KTC1G-UDIMM 1GB
G Skill Intl F4-3200C16-8GVR 8GB
报告一个错误
×
Bug description
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