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Crucial Technology BLS8G3N18AES4.16FE 8GB
Apacer Technology 78.CAGR9.40C0B 8GB

Crucial Technology BLS8G3N18AES4.16FE 8GB vs Apacer Technology 78.CAGR9.40C0B 8GB

总分
star star star star star
Crucial Technology BLS8G3N18AES4.16FE 8GB

Crucial Technology BLS8G3N18AES4.16FE 8GB

总分
star star star star star
Apacer Technology 78.CAGR9.40C0B 8GB

Apacer Technology 78.CAGR9.40C0B 8GB

差异 规格 评论

差异

Crucial Technology BLS8G3N18AES4.16FE 8GB 需要考虑的原因
Crucial Technology BLS8G3N18AES4.16FE 8GB
报告一个错误
Apacer Technology 78.CAGR9.40C0B 8GB 需要考虑的原因
Apacer Technology 78.CAGR9.40C0B 8GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    19 left arrow 42
    左右 -121% 更低的延时
  • 更快的读取速度，GB/s
    19.9 left arrow 13.2
    测试中的平均数值
  • 更快的写入速度，GB/s
    18.4 left arrow 9.4
    测试中的平均数值
  • 更高的内存带宽，mbps
    19200 left arrow 12800
    左右 1.5 更高的带宽

规格

完整的技术规格清单
Crucial Technology BLS8G3N18AES4.16FE 8GB
Apacer Technology 78.CAGR9.40C0B 8GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    42 left arrow 19
  • 读取速度，GB/s
    13.2 left arrow 19.9
  • 写入速度，GB/s
    9.4 left arrow 18.4
  • 内存带宽，mbps
    12800 left arrow 19200
Other
  • 描述
    PC3-12800, 1.5V, 1.35V , CAS Supported: 5 6 7 8 9 10 11 left arrow PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
  • 时序/时钟速度
    9-9-9-24 / 1600 MHz left arrow 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
  • 排名PassMark (越多越好)
    2326 left arrow 3834

Crucial Technology BLS8G3N18AES4.16FE 8GB RAM的比较

Samsung M471B1G73DB0-YK0 8GB
Hynix Semiconductor (Hyundai Electronics) HMT41GS6MFR8A-PB 8GB

Apacer Technology 78.CAGR9.40C0B 8GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
G Skill Intl F3-1866C8-8GTX 8GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
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最新比较

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Kingston 99U5584-017.A00LF 4GB
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G Skill Intl F4-3600C14-8GTRGB 8GB
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内存RAM
Crucial Technology BLS8G3N18AES4.16FE 8GB
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Apacer Technology 78.CAGR9.40C0B 8GB
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Apacer Technology 78.D2GF2.4010B 16GB
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内存RAM
SK Hynix HMT325U6CFR8C-PB 2GB
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内存RAM
Kingston 99U5474-022.A00LF 2GB
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A-DATA Technology AO2P26KC8T1-BC1S 8GB
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内存RAM
Samsung M393B1G70BH0-CK0 8GB
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内存RAM
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
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内存RAM