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Crucial Technology BLS8G3N18AES4.16FE 8GB
Apacer Technology GD2.2229BH.001 16GB

Crucial Technology BLS8G3N18AES4.16FE 8GB vs Apacer Technology GD2.2229BH.001 16GB

总分
star star star star star
Crucial Technology BLS8G3N18AES4.16FE 8GB

Crucial Technology BLS8G3N18AES4.16FE 8GB

总分
star star star star star
Apacer Technology GD2.2229BH.001 16GB

Apacer Technology GD2.2229BH.001 16GB

差异 规格 评论

差异

Crucial Technology BLS8G3N18AES4.16FE 8GB 需要考虑的原因
Crucial Technology BLS8G3N18AES4.16FE 8GB
报告一个错误
Apacer Technology GD2.2229BH.001 16GB 需要考虑的原因
Apacer Technology GD2.2229BH.001 16GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    36 left arrow 42
    左右 -17% 更低的延时
  • 更快的读取速度，GB/s
    25.5 left arrow 13.2
    测试中的平均数值
  • 更快的写入速度，GB/s
    18.4 left arrow 9.4
    测试中的平均数值
  • 更高的内存带宽，mbps
    17000 left arrow 12800
    左右 1.33 更高的带宽

规格

完整的技术规格清单
Crucial Technology BLS8G3N18AES4.16FE 8GB
Apacer Technology GD2.2229BH.001 16GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    42 left arrow 36
  • 读取速度，GB/s
    13.2 left arrow 25.5
  • 写入速度，GB/s
    9.4 left arrow 18.4
  • 内存带宽，mbps
    12800 left arrow 17000
Other
  • 描述
    PC3-12800, 1.5V, 1.35V , CAS Supported: 5 6 7 8 9 10 11 left arrow PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15
  • 时序/时钟速度
    9-9-9-24 / 1600 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • 排名PassMark (越多越好)
    2326 left arrow 3903

Crucial Technology BLS8G3N18AES4.16FE 8GB RAM的比较

Samsung M471B1G73DB0-YK0 8GB
Hynix Semiconductor (Hyundai Electronics) HMT41GS6MFR8A-PB 8GB

Apacer Technology GD2.2229BH.001 16GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

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内存RAM
Crucial Technology BLS8G3N18AES4.16FE 8GB
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Apacer Technology GD2.2229BH.001 16GB
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Kingston 99U5584-004.A00LF 4GB
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内存RAM
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内存RAM
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内存RAM
SK Hynix HMT325U6CFR8C-PB 2GB
SK Hynix HMT325U6CFR8C-PB 2GB
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内存RAM
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内存RAM
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Samsung M3 78T3354BZ0-CCC 256MB
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G Skill Intl F4-4133C19-8GTZC 8GB
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