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Crucial Technology BLS8G3N18AES4.16FE 8GB
Avant Technology W6451U66J7240ND 4GB

Crucial Technology BLS8G3N18AES4.16FE 8GB vs Avant Technology W6451U66J7240ND 4GB

总分
star star star star star
Crucial Technology BLS8G3N18AES4.16FE 8GB

Crucial Technology BLS8G3N18AES4.16FE 8GB

总分
star star star star star
Avant Technology W6451U66J7240ND 4GB

Avant Technology W6451U66J7240ND 4GB

差异 规格 评论

差异

Crucial Technology BLS8G3N18AES4.16FE 8GB 需要考虑的原因
Crucial Technology BLS8G3N18AES4.16FE 8GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    42 left arrow 75
    左右 44% 更低的延时
  • 更快的写入速度，GB/s
    9.4 left arrow 7.6
    测试中的平均数值
Avant Technology W6451U66J7240ND 4GB 需要考虑的原因
Avant Technology W6451U66J7240ND 4GB
报告一个错误
  • 更快的读取速度，GB/s
    15.6 left arrow 13.2
    测试中的平均数值
  • 更高的内存带宽，mbps
    19200 left arrow 12800
    左右 1.5 更高的带宽

规格

完整的技术规格清单
Crucial Technology BLS8G3N18AES4.16FE 8GB
Avant Technology W6451U66J7240ND 4GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    42 left arrow 75
  • 读取速度，GB/s
    13.2 left arrow 15.6
  • 写入速度，GB/s
    9.4 left arrow 7.6
  • 内存带宽，mbps
    12800 left arrow 19200
Other
  • 描述
    PC3-12800, 1.5V, 1.35V , CAS Supported: 5 6 7 8 9 10 11 left arrow PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
  • 时序/时钟速度
    9-9-9-24 / 1600 MHz left arrow 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
  • 排名PassMark (越多越好)
    2326 left arrow 1717

Crucial Technology BLS8G3N18AES4.16FE 8GB RAM的比较

Samsung M471B1G73DB0-YK0 8GB
Hynix Semiconductor (Hyundai Electronics) HMT41GS6MFR8A-PB 8GB

Avant Technology W6451U66J7240ND 4GB RAM的比较

A-DATA Technology AM2U16BC4P2-B05B 4GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Corsair CM4X4GF2666Z16K4 4GB
Corsair CM4X4GF2666Z16K4 4GB
内存RAM
Samsung M471B5173QH0-YK0 4GB
Samsung M471B5173QH0-YK0 4GB
Corsair CMW16GX4M1Z3200C16 16GB
Corsair CMW16GX4M1Z3200C16 16GB
内存RAM
Nanya Technology NT4GC72B4NA1NL-CG 4GB
Nanya Technology NT4GC72B4NA1NL-CG 4GB
Micron Technology 18ADF2G72AZ-2G3B1 16GB
Micron Technology 18ADF2G72AZ-2G3B1 16GB
内存RAM
Samsung M378B5773DH0-CH9 2GB
Samsung M378B5773DH0-CH9 2GB
Crucial Technology CT8G4DFRA32A.C8FP 8GB
Crucial Technology CT8G4DFRA32A.C8FP 8GB
内存RAM
Kingston ACR512X64D3S13C9G 4GB
Kingston ACR512X64D3S13C9G 4GB
Kingston 9905678-033.A00G 4GB
Kingston 9905678-033.A00G 4GB
内存RAM
Smart Modular SH564128FH8NZQNSCG 4GB
Smart Modular SH564128FH8NZQNSCG 4GB
Corsair CMT32GX4M4K3600C16 8GB
Corsair CMT32GX4M4K3600C16 8GB
内存RAM
Kingston 9905471-002.A00LF 2GB
Kingston 9905471-002.A00LF 2GB
SanMax Technologies Inc. SMD4-U16G48HD1-29Y 16GB
SanMax Technologies Inc. SMD4-U16G48HD1-29Y 16GB
内存RAM
Samsung M471B1G73DB0-YK0 8GB
Samsung M471B1G73DB0-YK0 8GB
Avant Technology H641GU67G1600G 8GB
Avant Technology H641GU67G1600G 8GB
内存RAM
Samsung M393B1G70BH0-CK0 8GB
Samsung M393B1G70BH0-CK0 8GB
Avant Technology W644GU44J2320NH 32GB
Avant Technology W644GU44J2320NH 32GB
内存RAM
Protocol Engines Kingrock 800 2GB 2GB
Protocol Engines Kingrock 800 2GB 2GB
Corsair CM4X8GE3000C15K4 8GB
Corsair CM4X8GE3000C15K4 8GB
内存RAM
Kingston KVR800D2N6/2G 2GB
Kingston KVR800D2N6/2G 2GB
Crucial Technology BLS4G4D26BFSE.8FB 4GB
Crucial Technology BLS4G4D26BFSE.8FB 4GB
内存RAM
Ramaxel Technology RMR5030ME68F9F1600 4GB
Ramaxel Technology RMR5030ME68F9F1600 4GB
InnoDisk Corporation M4UI-AGS1KC0K-C 16GB
InnoDisk Corporation M4UI-AGS1KC0K-C 16GB
内存RAM
Micron Technology 8JSF25664HZ-1G4D1 2GB
Micron Technology 8JSF25664HZ-1G4D1 2GB
SK Hynix HMA82GS6AFRFR-UH 16GB
SK Hynix HMA82GS6AFRFR-UH 16GB
内存RAM
Kingston 9965525-018.A00LF 4GB
Kingston 9965525-018.A00LF 4GB
Crucial Technology CT16G4DFD824A.C16FE 16GB
Crucial Technology CT16G4DFD824A.C16FE 16GB
内存RAM