Crucial Technology BLS8G3N18AES4.16FE 8GB

Avexir Technologies Corporation DDR4-3200 CL16 8GB 8GB

Crucial Technology BLS8G3N18AES4.16FE 8GB vs Avexir Technologies Corporation DDR4-3200 CL16 8GB 8GB

总分

Crucial Technology BLS8G3N18AES4.16FE 8GB

Crucial Technology BLS8G3N18AES4.16FE 8GB

总分

Avexir Technologies Corporation DDR4-3200 CL16 8GB 8GB

Avexir Technologies Corporation DDR4-3200 CL16 8GB 8GB

差异规格评论

差异

Crucial Technology BLS8G3N18AES4.16FE 8GB

需要考虑的原因
Crucial Technology BLS8G3N18AES4.16FE 8GB

报告一个错误

Avexir Technologies Corporation DDR4-3200 CL16 8GB 8GB

需要考虑的原因
Avexir Technologies Corporation DDR4-3200 CL16 8GB 8GB

报告一个错误

低于PassMark测试中的延时，ns

21 42

左右 -100% 更低的延时
更快的读取速度，GB/s

18.6 13.2

测试中的平均数值
更快的写入速度，GB/s

14.0 9.4

测试中的平均数值
更高的内存带宽，mbps

17000 12800

左右 1.33 更高的带宽

规格

完整的技术规格清单

Crucial Technology BLS8G3N18AES4.16FE 8GB

Avexir Technologies Corporation DDR4-3200 CL16 8GB 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

42 21
读取速度，GB/s

13.2 18.6
写入速度，GB/s

9.4 14.0
内存带宽，mbps

12800 17000

Other

描述

PC3-12800, 1.5V, 1.35V , CAS Supported: 5 6 7 8 9 10 11 PC4-17000, 1.2V, CAS Supported: 12 14 15 16
时序/时钟速度

9-9-9-24 / 1600 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

2326 3356

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

Crucial Technology BLS8G3N18AES4.16FE 8GB

Crucial Technology BLS8G3N18AES4.16FE 8GB

Avexir Technologies Corporation DDR4-3200 CL16 8GB 8GB

Avexir Technologies Corporation DDR4-3200 CL16 8GB 8GB

A-DATA Technology AM2L16BC4R1-B0AS 4GB

A-DATA Technology AM2L16BC4R1-B0AS 4GB

Heoriady HX2666DT8G-TD 8GB

Heoriady HX2666DT8G-TD 8GB

Crucial Technology CT51264BD1339.M16F 4GB

Crucial Technology CT51264BD1339.M16F 4GB

Gold Key Technology Co Ltd NMSO416F82-3200E 16GB

Gold Key Technology Co Ltd NMSO416F82-3200E 16GB

Kingston 99U5458-008.A00LF 4GB

Kingston 99U5458-008.A00LF 4GB

Crucial Technology BLM8G44C19U4BL.M8FE1 8GB

Crucial Technology BLM8G44C19U4BL.M8FE1 8GB

Samsung M3 78T3354BZ0-CCC 256MB

Samsung M3 78T3354BZ0-CCC 256MB

Kingston KHX3200C20S4/32GX 32GB

Kingston KHX3200C20S4/32GX 32GB

Micron Technology 16JTF51264HZ-1G6M1 4GB

Micron Technology 16JTF51264HZ-1G6M1 4GB

Avexir Technologies Corporation DDR4-2400 CL16 8GB 8GB

Avexir Technologies Corporation DDR4-2400 CL16 8GB 8GB

Patriot Memory (PDP Systems) PSD38G13332 8GB

Patriot Memory (PDP Systems) PSD38G13332 8GB

Apacer Technology D12.2326WH.001 16GB

Apacer Technology D12.2326WH.001 16GB

Crucial Technology CT51264AC800.C16FC 4GB

Crucial Technology CT51264AC800.C16FC 4GB

Avexir Technologies Corporation DDR4-2133 CL15 16GB 16GB

Avexir Technologies Corporation DDR4-2133 CL15 16GB 16G

Micron Technology 8JSF25664HZ-1G4D1 2GB

Micron Technology 8JSF25664HZ-1G4D1 2GB

Gloway International (HK) STK4U2133D15081C 8GB

Gloway International (HK) STK4U2133D15081C 8GB

G Skill Intl F2-8500CL5-2GBPI 2GB

G Skill Intl F2-8500CL5-2GBPI 2GB

V-GEN D4H4GL26A8TS5 4GB

V-GEN D4H4GL26A8TS5 4GB

Hynix Semiconductor (Hyundai Electronics) HMT41GS6MFR8A-PB 8GB

Hynix Semiconductor (Hyundai Electronics) HMT41GS6MFR8A

Micron Technology 16ATF2G64AZ-2G1A1 16GB

Micron Technology 16ATF2G64AZ-2G1A1 16GB

A-DATA Technology AD73I1B1672EG 2GB

A-DATA Technology AD73I1B1672EG 2GB

Panram International Corporation W4U2666PS-8GC19 8GB

Panram International Corporation W4U2666PS-8GC19 8GB

Crucial Technology CT51264BD160B.C16F 4GB

Crucial Technology CT51264BD160B.C16F 4GB

Corsair CMW32GX4M4C3000C15 8GB

Corsair CMW32GX4M4C3000C15 8GB

Samsung M3 78T2863QZS-CF7 1GB

Samsung M3 78T2863QZS-CF7 1GB

Kingston 9965604-008.C00G 8GB

Kingston 9965604-008.C00G 8GB