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Crucial Technology BLS8G3N18AES4.16FE 8GB
Hynix Semiconductor (Hyundai Electronics) HMA81GS6JJR8N-VK 8GB
比较
Crucial Technology BLS8G3N18AES4.16FE 8GB vs Hynix Semiconductor (Hyundai Electronics) HMA81GS6JJR8N-VK 8GB
总分
Crucial Technology BLS8G3N18AES4.16FE 8GB
总分
Hynix Semiconductor (Hyundai Electronics) HMA81GS6JJR8N-VK 8GB
差异
规格
评论
差异
需要考虑的原因
Crucial Technology BLS8G3N18AES4.16FE 8GB
报告一个错误
需要考虑的原因
Hynix Semiconductor (Hyundai Electronics) HMA81GS6JJR8N-VK 8GB
报告一个错误
低于PassMark测试中的延时,ns
26
42
左右 -62% 更低的延时
更快的读取速度,GB/s
16.8
13.2
测试中的平均数值
更快的写入速度,GB/s
13.5
9.4
测试中的平均数值
更高的内存带宽,mbps
21300
12800
左右 1.66 更高的带宽
规格
完整的技术规格清单
Crucial Technology BLS8G3N18AES4.16FE 8GB
Hynix Semiconductor (Hyundai Electronics) HMA81GS6JJR8N-VK 8GB
主要特点
存储器类型
DDR3
DDR4
PassMark中的延时,ns
42
26
读取速度,GB/s
13.2
16.8
写入速度,GB/s
9.4
13.5
内存带宽,mbps
12800
21300
Other
描述
PC3-12800, 1.5V, 1.35V , CAS Supported: 5 6 7 8 9 10 11
PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
时序/时钟速度
9-9-9-24 / 1600 MHz
17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)
2326
2880
Crucial Technology BLS8G3N18AES4.16FE 8GB RAM的比较
Samsung M471B1G73DB0-YK0 8GB
Hynix Semiconductor (Hyundai Electronics) HMT41GS6MFR8A-PB 8GB
Hynix Semiconductor (Hyundai Electronics) HMA81GS6JJR8N-VK 8GB RAM的比较
Kingston KN2M64-ETB 8GB
Chun Well Technology Holding Limited CL16-18-18 D4-2666 8GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Corsair CMK16GX4M2L3000C15 8GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Mushkin MR[A/B]4U300JJJM8G 8GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
Nanya Technology NT8GA64D88CX3S-JR 8GB
Samsung M471B5673FH0-CF8 2GB
Kingston 9905702-019.A00G 8GB
Crucial Technology BLS8G3N18AES4.16FE 8GB
Hynix Semiconductor (Hyundai Electronics) HMA81GS6JJR8N
Patriot Memory (PDP Systems) PSD38G16002 8GB
Avexir Technologies Corporation DDR4-2800 CL15 8GB 8GB
Crucial Technology CT51264BD1339.M16F 4GB
G Skill Intl F4-3600C17-16GTZKW 16GB
Kingston ACR512X64D3S13C9G 4GB
G Skill Intl F4-3200C14-16GVK 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
Kingston 99U5643-001.A00G 8GB
Kingston 9965525-140.A00LF 8GB
Super Talent SUPERTALENT 2GB
Kreton Corporation 51624xxxx68x35xxxx 2GB
G Skill Intl F4-4400C18-8GTRS 8GB
Kingston 9905403-444.A00LF 4GB
Apacer Technology 78.CAGMR.ARC0B 8GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Kingston X0N6VG-HYD2 16GB
Samsung M471B5173QH0-YK0 4GB
Hynix Semiconductor (Hyundai Electronics) GKE800SO51208
报告一个错误
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