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Crucial Technology BLS8G3N18AES4.16FE 8GB
Kingston MSI24D4U7D8MD-16 16GB

Crucial Technology BLS8G3N18AES4.16FE 8GB vs Kingston MSI24D4U7D8MD-16 16GB

总分
star star star star star
Crucial Technology BLS8G3N18AES4.16FE 8GB

Crucial Technology BLS8G3N18AES4.16FE 8GB

总分
star star star star star
Kingston MSI24D4U7D8MD-16 16GB

Kingston MSI24D4U7D8MD-16 16GB

差异 规格 评论

差异

Crucial Technology BLS8G3N18AES4.16FE 8GB 需要考虑的原因
Crucial Technology BLS8G3N18AES4.16FE 8GB
报告一个错误
Kingston MSI24D4U7D8MD-16 16GB 需要考虑的原因
Kingston MSI24D4U7D8MD-16 16GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    23 left arrow 42
    左右 -83% 更低的延时
  • 更快的读取速度，GB/s
    16.6 left arrow 13.2
    测试中的平均数值
  • 更快的写入速度，GB/s
    10.9 left arrow 9.4
    测试中的平均数值
  • 更高的内存带宽，mbps
    19200 left arrow 12800
    左右 1.5 更高的带宽

规格

完整的技术规格清单
Crucial Technology BLS8G3N18AES4.16FE 8GB
Kingston MSI24D4U7D8MD-16 16GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    42 left arrow 23
  • 读取速度，GB/s
    13.2 left arrow 16.6
  • 写入速度，GB/s
    9.4 left arrow 10.9
  • 内存带宽，mbps
    12800 left arrow 19200
Other
  • 描述
    PC3-12800, 1.5V, 1.35V , CAS Supported: 5 6 7 8 9 10 11 left arrow PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
  • 时序/时钟速度
    9-9-9-24 / 1600 MHz left arrow 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
  • 排名PassMark (越多越好)
    2326 left arrow 2848

Crucial Technology BLS8G3N18AES4.16FE 8GB RAM的比较

Samsung M471B1G73DB0-YK0 8GB
Hynix Semiconductor (Hyundai Electronics) HMT41GS6MFR8A-PB 8GB

Kingston MSI24D4U7D8MD-16 16GB RAM的比较

Kingmax Semiconductor FLGF65F-C8KJ9A 4GB
Kingston 9905403-444.A00LF 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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最新比较

Smart Modular SH564128FH8NZQNSCG 4GB
Smart Modular SH564128FH8NZQNSCG 4GB
Gold Key Technology Co Ltd NMUD416F82-3200D 16GB
Gold Key Technology Co Ltd NMUD416F82-3200D 16GB
内存RAM
SK Hynix DDR2 800 2G 2GB
SK Hynix DDR2 800 2G 2GB
SK Hynix HMAA1GU6CJR6N-XN 8GB
SK Hynix HMAA1GU6CJR6N-XN 8GB
内存RAM
Team Group Inc. Vulcan-1600 4GB
Team Group Inc. Vulcan-1600 4GB
Corsair CMD16GX4M2E4000C19 8GB
Corsair CMD16GX4M2E4000C19 8GB
内存RAM
Kingston 9965525-018.A00LF 4GB
Kingston 9965525-018.A00LF 4GB
Samsung M378B1G73BH0-CH9 8GB
Samsung M378B1G73BH0-CH9 8GB
内存RAM
Golden Empire 1GB DDR2 800 CAS=4 1GB
Golden Empire 1GB DDR2 800 CAS=4 1GB
Shenzhen Xingmem Technology Corp CM4X8GF2400C1XMP 8GB
Shenzhen Xingmem Technology Corp CM4X8GF2400C1XMP 8GB
内存RAM
AMD AE34G2139U2 4GB
AMD AE34G2139U2 4GB
G Skill Intl F4-2666C15-8GVB 8GB
G Skill Intl F4-2666C15-8GVB 8GB
内存RAM
A-DATA Technology AD73I1B1672EG 2GB
A-DATA Technology AD73I1B1672EG 2GB
Wilk Elektronik S.A. IRX3000D464L16S/4G 4GB
Wilk Elektronik S.A. IRX3000D464L16S/4G 4GB
内存RAM
Samsung M393B1G70BH0-YK0 8GB
Samsung M393B1G70BH0-YK0 8GB
Samsung V-GeN D4S8GL26A8TL5 8GB
Samsung V-GeN D4S8GL26A8TL5 8GB
内存RAM
Kingston ACR512X64D3S13C9G 4GB
Kingston ACR512X64D3S13C9G 4GB
G Skill Intl F4-3600C18-32GTRS 32GB
G Skill Intl F4-3600C18-32GTRS 32GB
内存RAM
Kingston 99U5584-004.A00LF 4GB
Kingston 99U5584-004.A00LF 4GB
InnoDisk Corporation M4SI-BGS2OC0K-A 32GB
InnoDisk Corporation M4SI-BGS2OC0K-A 32GB
内存RAM
Samsung M471B5273DH0-CK0 4GB
Samsung M471B5273DH0-CK0 4GB
Samsung M471A1K43DB1-CWE 8GB
Samsung M471A1K43DB1-CWE 8GB
内存RAM
SK Hynix HMA82GS6CJR8N-VK 16GB
SK Hynix HMA82GS6CJR8N-VK 16GB
Corsair CMK8GX4M2A2133C13 4GB
Corsair CMK8GX4M2A2133C13 4GB
内存RAM
Samsung M378B5273CH0-CH9 4GB
Samsung M378B5273CH0-CH9 4GB
G Skill Intl F4-3200C16-16GTZRX 16GB
G Skill Intl F4-3200C16-16GTZRX 16GB
内存RAM
Kingston ACR256X64D3S1333C9 2GB
Kingston ACR256X64D3S1333C9 2GB
Crucial Technology BLS16G4D26BFSE.16FE 16GB
Crucial Technology BLS16G4D26BFSE.16FE 16GB
内存RAM