Crucial Technology BLS8G4D26BFSC.16FE 8GB vs Micron Technology AFLD48EH1P 8GB

总分

Crucial Technology BLS8G4D26BFSC.16FE 8GB

Crucial Technology BLS8G4D26BFSC.16FE 8GB

总分

Micron Technology AFLD48EH1P 8GB

Micron Technology AFLD48EH1P 8GB

差异规格评论

差异

Crucial Technology BLS8G4D26BFSC.16FE 8GB

需要考虑的原因
Crucial Technology BLS8G4D26BFSC.16FE 8GB

报告一个错误

更高的内存带宽，mbps

21300 19200

左右 1.11% 更高的带宽

Micron Technology AFLD48EH1P 8GB

需要考虑的原因
Micron Technology AFLD48EH1P 8GB

报告一个错误

低于PassMark测试中的延时，ns

43 66

左右 -53% 更低的延时
更快的写入速度，GB/s

10.7 8.3

测试中的平均数值

规格

完整的技术规格清单

Crucial Technology BLS8G4D26BFSC.16FE 8GB

Micron Technology AFLD48EH1P 8GB

主要特点

存储器类型

DDR4 DDR4
PassMark中的延时，ns

66 43
读取速度，GB/s

16.1 16.1
写入速度，GB/s

8.3 10.7
内存带宽，mbps

21300 19200

Other

描述

PC4-21300, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16 18 20 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
时序/时钟速度

17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

1810 2928

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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SanMax Technologies Inc. SMD4-E16G48ME-26V 16GB

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Corsair CMT32GX4M2Z3200C16 16GB

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Unifosa Corporation GU332G0ALEPR8H2C6F 2GB

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Samsung M386B4G70DM0-CMA4 32GB

Samsung M386B4G70DM0-CMA4 32GB

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SanMax Technologies Inc. SMD4-U16G48MJ-32AA 16GB

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Team Group Inc. Vulcan-1600 4GB

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Ramaxel Technology RMT3020EC58E9F1333 4GB

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Corsair CMK8GX4M1Z3600C18 8GB