Crucial Technology BLT16G4D30AETA.K16FB 16GB vs Kingston 9905624-007.A00G 8GB

总分

Crucial Technology BLT16G4D30AETA.K16FB 16GB

Crucial Technology BLT16G4D30AETA.K16FB 16GB

总分

Kingston 9905624-007.A00G 8GB

Kingston 9905624-007.A00G 8GB

差异规格评论

差异

Crucial Technology BLT16G4D30AETA.K16FB 16GB

需要考虑的原因
Crucial Technology BLT16G4D30AETA.K16FB 16GB

报告一个错误

更快的读取速度，GB/s

17.9 13.8

测试中的平均数值
更快的写入速度，GB/s

14.7 6.7

测试中的平均数值

Kingston 9905624-007.A00G 8GB

需要考虑的原因
Kingston 9905624-007.A00G 8GB

报告一个错误

低于PassMark测试中的延时，ns

24 26

左右 -8% 更低的延时
更高的内存带宽，mbps

19200 17000

左右 1.13 更高的带宽

规格

完整的技术规格清单

Crucial Technology BLT16G4D30AETA.K16FB 16GB

Kingston 9905624-007.A00G 8GB

主要特点

存储器类型

DDR4 DDR4
PassMark中的延时，ns

26 24
读取速度，GB/s

17.9 13.8
写入速度，GB/s

14.7 6.7
内存带宽，mbps

17000 19200

Other

描述

PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16 17 18 19 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
时序/时钟速度

14-14-14, 15-15-15, 16-16-16 / 2133 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

3705 2168

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Panram International Corporation PUD42133C154G2VS 4GB

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SK Hynix HMA82GR7JJR8N-VK 16GB

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Elpida EBJ41UF8BDU5-GN-F 4GB

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Samsung M3 78T2863EHS-CF7 1GB

Samsung M3 78T2863EHS-CF7 1GB

Golden Empire CL15-17-17 D4-3000 8GB

Golden Empire CL15-17-17 D4-3000 8GB

Kingston 9905403-447.A00LF 4GB

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Hynix Semiconductor (Hyundai Electronics) HMA41GU6AFR8N

Kingston 99U5474-037.A00LF 4GB

Kingston 99U5474-037.A00LF 4GB

Corsair CMK16GX4M2K4266C16 8GB

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Kingston 9905458-017.A01LF 4GB

Kingston 9905458-017.A01LF 4GB

Samsung M471A1K43EB1-CWE 8GB

Samsung M471A1K43EB1-CWE 8GB