Crucial Technology BLT2G3D1608DT1TX0 2GB vs Corsair CMV8GX4M1A2400C16 8GB

总分

Crucial Technology BLT2G3D1608DT1TX0 2GB

Crucial Technology BLT2G3D1608DT1TX0 2GB

总分

Corsair CMV8GX4M1A2400C16 8GB

Corsair CMV8GX4M1A2400C16 8GB

差异规格评论

差异

Crucial Technology BLT2G3D1608DT1TX0 2GB

需要考虑的原因
Crucial Technology BLT2G3D1608DT1TX0 2GB

报告一个错误

低于PassMark测试中的延时，ns

23 30

左右 23% 更低的延时
更快的写入速度，GB/s

9.4 8.6

测试中的平均数值

Corsair CMV8GX4M1A2400C16 8GB

需要考虑的原因
Corsair CMV8GX4M1A2400C16 8GB

报告一个错误

更快的读取速度，GB/s

14.4 13.6

测试中的平均数值
更高的内存带宽，mbps

19200 10600

左右 1.81 更高的带宽

规格

完整的技术规格清单

Crucial Technology BLT2G3D1608DT1TX0 2GB

Corsair CMV8GX4M1A2400C16 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

23 30
读取速度，GB/s

13.6 14.4
写入速度，GB/s

9.4 8.6
内存带宽，mbps

10600 19200

Other

描述

PC3-10600, 1.5V, CAS Supported: 5 6 7 8 9 10 PC4-19200, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16 17 18 19 20 25
时序/时钟速度

7-7-7-20 / 1333 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

2096 2511

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

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Absolute Latency

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RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Hynix Semiconductor (Hyundai Electronics) GKE160SO10240

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Kingston 9905625-098.A00G 16GB

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Kingston 9905458-017.A01LF 4GB

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Apacer Technology 78.B1GQB.4010B 4GB

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Kingmax Semiconductor KLDE88F-B8MO5 2GB

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Dust Leopard DDR4-2400 C16 8GB 8GB

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Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

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Samsung M378A4G43AB2-CWE 32GB

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Kingston HP698651-154-MCN 8GB

Cortus SAS 8ATF1G64AZ-2G6E1 8GB

Cortus SAS 8ATF1G64AZ-2G6E1 8GB

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Samsung M393B5170FH0-CK0 4GB

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G Skill Intl F4-2400C16-16GFX 16GB

AMD R5S38G1601U2S 8GB

AMD R5S38G1601U2S 8GB

Shanghai Kuxin Microelectronics Ltd NMUD480E82-3600 8GB

Shanghai Kuxin Microelectronics Ltd NMUD480E82-3600 8GB