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Crucial Technology BLT2G3D1608DT1TX0 2GB
Corsair CMW32GX4M4D3600C18 8GB

Crucial Technology BLT2G3D1608DT1TX0 2GB vs Corsair CMW32GX4M4D3600C18 8GB

总分
star star star star star
Crucial Technology BLT2G3D1608DT1TX0 2GB

Crucial Technology BLT2G3D1608DT1TX0 2GB

总分
star star star star star
Corsair CMW32GX4M4D3600C18 8GB

Corsair CMW32GX4M4D3600C18 8GB

差异 规格 评论

差异

Crucial Technology BLT2G3D1608DT1TX0 2GB 需要考虑的原因
Crucial Technology BLT2G3D1608DT1TX0 2GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    23 left arrow 28
    左右 18% 更低的延时
Corsair CMW32GX4M4D3600C18 8GB 需要考虑的原因
Corsair CMW32GX4M4D3600C18 8GB
报告一个错误
  • 更快的读取速度，GB/s
    18.3 left arrow 13.6
    测试中的平均数值
  • 更快的写入速度，GB/s
    15.8 left arrow 9.4
    测试中的平均数值
  • 更高的内存带宽，mbps
    17000 left arrow 10600
    左右 1.6 更高的带宽

规格

完整的技术规格清单
Crucial Technology BLT2G3D1608DT1TX0 2GB
Corsair CMW32GX4M4D3600C18 8GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    23 left arrow 28
  • 读取速度，GB/s
    13.6 left arrow 18.3
  • 写入速度，GB/s
    9.4 left arrow 15.8
  • 内存带宽，mbps
    10600 left arrow 17000
Other
  • 描述
    PC3-10600, 1.5V, CAS Supported: 5 6 7 8 9 10 left arrow PC4-17000, 1.2V, CAS Supported: 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24
  • 时序/时钟速度
    7-7-7-20 / 1333 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • 排名PassMark (越多越好)
    2096 left arrow 3736

Crucial Technology BLT2G3D1608DT1TX0 2GB RAM的比较

Crucial Technology BLT2G3D1608DT1TX0. 2GB
Crucial Technology CT8G4SFRA32A.M8FR 8GB

Corsair CMW32GX4M4D3600C18 8GB RAM的比较

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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最新比较

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Corsair CMX16GX3M2A1333C9 8GB
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内存RAM
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SK Hynix HMT41GU7BFR8A-PB 8GB
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Kingston 99U5474-028.A00LF 4GB
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GIGA - BYTE Technology Co Ltd GR26C16S8K1HU408 8GB
内存RAM
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Crucial Technology CT102464BF160B-16F 8GB
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内存RAM
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内存RAM
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内存RAM
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Samsung M393A1G40DB1-CRC 8GB
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