Crucial Technology BLT2G3D1608DT1TX0 2GB vs Crucial Technology BLS16G4S240FSD.16FBD 16GB

总分

Crucial Technology BLT2G3D1608DT1TX0 2GB

Crucial Technology BLT2G3D1608DT1TX0 2GB

总分

Crucial Technology BLS16G4S240FSD.16FBD 16GB

Crucial Technology BLS16G4S240FSD.16FBD 16GB

差异规格评论

差异

Crucial Technology BLT2G3D1608DT1TX0 2GB

需要考虑的原因
Crucial Technology BLT2G3D1608DT1TX0 2GB

报告一个错误

低于PassMark测试中的延时，ns

23 38

左右 39% 更低的延时

Crucial Technology BLS16G4S240FSD.16FBD 16GB

需要考虑的原因
Crucial Technology BLS16G4S240FSD.16FBD 16GB

报告一个错误

更快的读取速度，GB/s

14.3 13.6

测试中的平均数值
更快的写入速度，GB/s

10.9 9.4

测试中的平均数值
更高的内存带宽，mbps

19200 10600

左右 1.81 更高的带宽

规格

完整的技术规格清单

Crucial Technology BLT2G3D1608DT1TX0 2GB

Crucial Technology BLS16G4S240FSD.16FBD 16GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

23 38
读取速度，GB/s

13.6 14.3
写入速度，GB/s

9.4 10.9
内存带宽，mbps

10600 19200

Other

描述

PC3-10600, 1.5V, CAS Supported: 5 6 7 8 9 10 PC4-19200, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16 18 20
时序/时钟速度

7-7-7-20 / 1333 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

2096 2638

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

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RAM 2

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Frequency (Mhz) *

Absolute Latency

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Lexar Co Limited LD4AU016G-H3200GST 16GB

Lexar Co Limited LD4AU016G-H3200GST 16GB

G Skill Intl F4-4000C17-8GTZR 8GB

G Skill Intl F4-4000C17-8GTZR 8GB

Corsair CMSO4GX3M1C1600C11 4GB

Corsair CMSO4GX3M1C1600C11 4GB

A-DATA Technology AM2P32NC8W1-BCFS 8GB

A-DATA Technology AM2P32NC8W1-BCFS 8GB

G Skill Intl F2-8500CL5-2GBPI 2GB

G Skill Intl F2-8500CL5-2GBPI 2GB

Kingmax Semiconductor GLLG43F-D8KBGA------ 8GB

Kingmax Semiconductor GLLG43F-D8KBGA------ 8GB

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Hynix Semiconductor (Hyundai Electronics) HMT42GR7MFR4A

Samsung M393A1G40DB1-CRC 8GB

Samsung M393A1G40DB1-CRC 8GB