Crucial Technology BLT2G3D1608DT1TX0 2GB vs Crucial Technology BLS4G4D26BFSB.8FBR2 4GB

总分

Crucial Technology BLT2G3D1608DT1TX0 2GB

Crucial Technology BLT2G3D1608DT1TX0 2GB

总分

Crucial Technology BLS4G4D26BFSB.8FBR2 4GB

Crucial Technology BLS4G4D26BFSB.8FBR2 4GB

差异规格评论

差异

Crucial Technology BLT2G3D1608DT1TX0 2GB

需要考虑的原因
Crucial Technology BLT2G3D1608DT1TX0 2GB

报告一个错误

Crucial Technology BLS4G4D26BFSB.8FBR2 4GB

需要考虑的原因
Crucial Technology BLS4G4D26BFSB.8FBR2 4GB

报告一个错误

低于PassMark测试中的延时，ns

21 23

左右 -10% 更低的延时
更快的读取速度，GB/s

17.7 13.6

测试中的平均数值
更快的写入速度，GB/s

13.6 9.4

测试中的平均数值
更高的内存带宽，mbps

21300 10600

左右 2.01 更高的带宽

规格

完整的技术规格清单

Crucial Technology BLT2G3D1608DT1TX0 2GB

Crucial Technology BLS4G4D26BFSB.8FBR2 4GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

23 21
读取速度，GB/s

13.6 17.7
写入速度，GB/s

9.4 13.6
内存带宽，mbps

10600 21300

Other

描述

PC3-10600, 1.5V, CAS Supported: 5 6 7 8 9 10 PC4-21300, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16 18 20
时序/时钟速度

7-7-7-20 / 1333 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

2096 2822

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

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Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

Crucial Technology BLT2G3D1608DT1TX0 2GB

Crucial Technology BLT2G3D1608DT1TX0 2GB

Crucial Technology BLS4G4D26BFSB.8FBR2 4GB

Crucial Technology BLS4G4D26BFSB.8FBR2 4GB

Samsung M471A4G43BB1-CWE 32GB

Samsung M471A4G43BB1-CWE 32GB

Crucial Technology CT32G4SFD832A.M16FB 32GB

Crucial Technology CT32G4SFD832A.M16FB 32GB

Kingston KHX1600C9D3/8G 8GB

Kingston KHX1600C9D3/8G 8GB

Crucial Technology BLS4G4D26BFSE.8FBR2 4GB

Crucial Technology BLS4G4D26BFSE.8FBR2 4GB

Nanya Technology NT2GT64U8HD0BY-AD 2GB

Nanya Technology NT2GT64U8HD0BY-AD 2GB

Micron Technology 8ATF1G64HZ-3G2E1 8GB

Micron Technology 8ATF1G64HZ-3G2E1 8GB

SK Hynix HYMP31GF72CMP4D5Y5 8GB

SK Hynix HYMP31GF72CMP4D5Y5 8GB

Panram International Corporation W4U2400PS-4G 4GB

Panram International Corporation W4U2400PS-4G 4GB

AMD R5S38G1601U2S 8GB

AMD R5S38G1601U2S 8GB

Kingston HP37D4U1S8ME-16X 16GB

Kingston HP37D4U1S8ME-16X 16GB

Nanya Technology NT4GC72B4NA1NL-CG 4GB

Nanya Technology NT4GC72B4NA1NL-CG 4GB

Crucial Technology 16G4UD2400.C16BD1 16GB

Crucial Technology 16G4UD2400.C16BD1 16GB

Crucial Technology CT25664AA800.M16FM 2GB

Crucial Technology CT25664AA800.M16FM 2GB

Shenzhen Xingmem Technology Corp 8ATF51264AZ-2G1A1 4GB

Shenzhen Xingmem Technology Corp 8ATF51264AZ-2G1A1 4GB

Samsung M391B5273CH0-CH9 4GB

Samsung M391B5273CH0-CH9 4GB

G Skill Intl F4-3733C17-4GTZ 4GB

G Skill Intl F4-3733C17-4GTZ 4GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO10240

Micron Technology 16ATF2G64HZ-2G3H1 16GB

Micron Technology 16ATF2G64HZ-2G3H1 16GB

Kingston 99U5471-012.A00LF 4GB

Kingston 99U5471-012.A00LF 4GB

Kingston KVR800D2S6/4G 4GB

Kingston KVR800D2S6/4G 4GB

Kingston ACR256X64D3S1333C9 2GB

Kingston ACR256X64D3S1333C9 2GB

Micron Technology 8ATF1G64AZ-3G2R1 8GB

Micron Technology 8ATF1G64AZ-3G2R1 8GB

Samsung M3 93T5750CZA-CE6 2GB

Samsung M3 93T5750CZA-CE6 2GB

Hynix Semiconductor (Hyundai Electronics) HMA82GR7AFR8N-UH 16GB

Hynix Semiconductor (Hyundai Electronics) HMA82GR7AFR8N

TwinMOS 8DHE3MN8-HATP 2GB

TwinMOS 8DHE3MN8-HATP 2GB

Samsung M386A8K40CM2-CRC 64GB

Samsung M386A8K40CM2-CRC 64GB