Crucial Technology BLT2G3D1608DT1TX0 2GB vs Kingston 9905668-001.A00G 8GB

总分

Crucial Technology BLT2G3D1608DT1TX0 2GB

Crucial Technology BLT2G3D1608DT1TX0 2GB

总分

Kingston 9905668-001.A00G 8GB

Kingston 9905668-001.A00G 8GB

差异规格评论

差异

Crucial Technology BLT2G3D1608DT1TX0 2GB

需要考虑的原因
Crucial Technology BLT2G3D1608DT1TX0 2GB

报告一个错误

低于PassMark测试中的延时，ns

23 70

左右 67% 更低的延时
更快的读取速度，GB/s

13.6 9

测试中的平均数值
更快的写入速度，GB/s

9.4 6.7

测试中的平均数值

Kingston 9905668-001.A00G 8GB

需要考虑的原因
Kingston 9905668-001.A00G 8GB

报告一个错误

更高的内存带宽，mbps

17000 10600

左右 1.6 更高的带宽

规格

完整的技术规格清单

Crucial Technology BLT2G3D1608DT1TX0 2GB

Kingston 9905668-001.A00G 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

23 70
读取速度，GB/s

13.6 9.0
写入速度，GB/s

9.4 6.7
内存带宽，mbps

10600 17000

Other

描述

PC3-10600, 1.5V, CAS Supported: 5 6 7 8 9 10 PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16
时序/时钟速度

7-7-7-20 / 1333 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

2096 1363

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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G Skill Intl F3-1866C8-8GTX 8GB

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Samsung M471B5273CH0-CH9 4GB

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Samsung M471A1G44AB0-CWE 8GB

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AMD AE34G1601U1 4GB

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Micron Technology MTA8ATF1G64HZ-2G3B1 16GB

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Unifosa Corporation GU332G0ALEPR8H2C6F 2GB

Corsair CMG16GX4M2D3600C18 8GB

Corsair CMG16GX4M2D3600C18 8GB

Patriot Memory (PDP Systems) 1866 CL9 Series 4GB

Patriot Memory (PDP Systems) 1866 CL9 Series 4GB

G Skill Intl F4-2400C16-16GFT 16GB

G Skill Intl F4-2400C16-16GFT 16GB

TwinMOS 8DPT5MK8-TATP 2GB

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Kingston 9965604-008.D00G 16GB

Kingston 9965604-008.D00G 16GB

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TwinMOS 8DPT5MK8-TATP 2GB

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Kingston 99U5713-003.A00G 4GB