Crucial Technology BLT2G3D1608DT1TX0 2GB vs Kingston XG9XKG-MIE 16GB

总分

Crucial Technology BLT2G3D1608DT1TX0 2GB

Crucial Technology BLT2G3D1608DT1TX0 2GB

总分

Kingston XG9XKG-MIE 16GB

Kingston XG9XKG-MIE 16GB

差异规格评论

差异

Crucial Technology BLT2G3D1608DT1TX0 2GB

需要考虑的原因
Crucial Technology BLT2G3D1608DT1TX0 2GB

报告一个错误

低于PassMark测试中的延时，ns

23 55

左右 58% 更低的延时

Kingston XG9XKG-MIE 16GB

需要考虑的原因
Kingston XG9XKG-MIE 16GB

报告一个错误

更快的读取速度，GB/s

17.2 13.6

测试中的平均数值
更快的写入速度，GB/s

14.3 9.4

测试中的平均数值
更高的内存带宽，mbps

25600 10600

左右 2.42 更高的带宽

规格

完整的技术规格清单

Crucial Technology BLT2G3D1608DT1TX0 2GB

Kingston XG9XKG-MIE 16GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

23 55
读取速度，GB/s

13.6 17.2
写入速度，GB/s

9.4 14.3
内存带宽，mbps

10600 25600

Other

描述

PC3-10600, 1.5V, CAS Supported: 5 6 7 8 9 10 PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 24
时序/时钟速度

7-7-7-20 / 1333 MHz 20-20-20, 22-22-22, 24-24-24 / 3200 MHz
排名PassMark (越多越好)

2096 2870

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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Nanya Technology NT512T64U88B0BY-3C 512MB

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Kingston KVR533D2N4 512MB

Mushkin 99[2/7/4]204F 4GB

Mushkin 99[2/7/4]204F 4GB

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Samsung M471A1G44AB0-CWE 8GB

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Corsair CMD8GX4M2B3600C18 4GB

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Kingston ACR256X64D3S1333C9 2GB

Corsair CMD128GX4M8A2666C15 16GB

Corsair CMD128GX4M8A2666C15 16GB

TwinMOS 8DHE3MN8-HATP 2GB

TwinMOS 8DHE3MN8-HATP 2GB

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G Skill Intl F4-3200C16-16GTZKO 16GB

Samsung M471B5173QH0-YK0 4GB

Samsung M471B5173QH0-YK0 4GB

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Corsair CMD32GX4M2C3466C16W 16GB