Crucial Technology BLT2G3D1608DT1TX0 2GB vs Micron Technology 8ATF1G64HZ-3G2E1 8GB

总分

Crucial Technology BLT2G3D1608DT1TX0 2GB

Crucial Technology BLT2G3D1608DT1TX0 2GB

总分

Micron Technology 8ATF1G64HZ-3G2E1 8GB

Micron Technology 8ATF1G64HZ-3G2E1 8GB

差异规格评论

差异

Crucial Technology BLT2G3D1608DT1TX0 2GB

需要考虑的原因
Crucial Technology BLT2G3D1608DT1TX0 2GB

报告一个错误

Micron Technology 8ATF1G64HZ-3G2E1 8GB

需要考虑的原因
Micron Technology 8ATF1G64HZ-3G2E1 8GB

报告一个错误

更快的读取速度，GB/s

17 13.6

测试中的平均数值
更快的写入速度，GB/s

13.4 9.4

测试中的平均数值
更高的内存带宽，mbps

25600 10600

左右 2.42 更高的带宽

规格

完整的技术规格清单

Crucial Technology BLT2G3D1608DT1TX0 2GB

Micron Technology 8ATF1G64HZ-3G2E1 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

23 23
读取速度，GB/s

13.6 17.0
写入速度，GB/s

9.4 13.4
内存带宽，mbps

10600 25600

Other

描述

PC3-10600, 1.5V, CAS Supported: 5 6 7 8 9 10 PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 26 28
时序/时钟速度

7-7-7-20 / 1333 MHz 20-20-20, 22-22-22, 24-24-24 / 3200 MHz
排名PassMark (越多越好)

2096 2936

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

Crucial Technology BLT2G3D1608DT1TX0 2GB

Crucial Technology BLT2G3D1608DT1TX0 2GB

Micron Technology 8ATF1G64HZ-3G2E1 8GB

Micron Technology 8ATF1G64HZ-3G2E1 8GB

Hynix Semiconductor (Hyundai Electronics) HMT41GS6MFR8A-PB 8GB

Hynix Semiconductor (Hyundai Electronics) HMT41GS6MFR8A

Apacer Technology GD2.22428S.001 8GB

Apacer Technology GD2.22428S.001 8GB

Patriot Memory (PDP Systems) 1866 CL9 Series 4GB

Patriot Memory (PDP Systems) 1866 CL9 Series 4GB

SK Hynix HMAA2GU6AJR8N-XN 16GB

SK Hynix HMAA2GU6AJR8N-XN 16GB

SK Hynix HYMP112U64CP8-S5 1GB

SK Hynix HYMP112U64CP8-S5 1GB

Crucial Technology CB8GS2400.C8JT 8GB

Crucial Technology CB8GS2400.C8JT 8GB

TwinMOS 8DPT5MK8-TATP 2GB

TwinMOS 8DPT5MK8-TATP 2GB

Crucial Technology BLS8G4D240FSEK.8FBR 8GB

Crucial Technology BLS8G4D240FSEK.8FBR 8GB

Crucial Technology CT51264AC800.C16FC 4GB

Crucial Technology CT51264AC800.C16FC 4GB

A-DATA Technology AO1P32NC8T1-BZ4SHD 8GB

A-DATA Technology AO1P32NC8T1-BZ4SHD 8GB

Samsung M378B5173BH0-CH9 4GB

Samsung M378B5173BH0-CH9 4GB

Samsung M474A1G43DB0-CPB 8GB

Samsung M474A1G43DB0-CPB 8GB

Samsung M393B5270CH0-CH9 4GB

Samsung M393B5270CH0-CH9 4GB

Ramaxel Technology RMSA3320ME88HBF-3200 16GB

Ramaxel Technology RMSA3320ME88HBF-3200 16GB

Samsung M378B5673FH0-CH9 2GB

Samsung M378B5673FH0-CH9 2GB

Thermaltake Technology Co Ltd R017D408GX2-4000C19A 8GB

Thermaltake Technology Co Ltd R017D408GX2-4000C19A 8GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO10240

Avexir Technologies Corporation DDR4-2800 CL15 4GB 4GB

Avexir Technologies Corporation DDR4-2800 CL15 4GB 4GB

G Skill Intl F3-2800C12-8GTXDG 8GB

G Skill Intl F3-2800C12-8GTXDG 8GB

Shenzhen Xingmem Technology Corp KRE-D4U2400M/4G 4GB

Shenzhen Xingmem Technology Corp KRE-D4U2400M/4G 4GB

Apacer Technology 78.01G86.9H50C 1GB

Apacer Technology 78.01G86.9H50C 1GB

Kingston M378A1K43CB2-CRC 8GB

Kingston M378A1K43CB2-CRC 8GB

Crucial Technology CT51264BA1339.C16F 4GB

Crucial Technology CT51264BA1339.C16F 4GB

SK Hynix HYMP164U64CP6-Y5 512MB

SK Hynix HYMP164U64CP6-Y5 512MB

Samsung V-GeN D4S8GL30A8TX5 8GB

Samsung V-GeN D4S8GL30A8TX5 8GB