Crucial Technology BLT2G3D1608DT1TX0 2GB vs Neo Forza GKE160SO204808-3200 16GB

总分

Crucial Technology BLT2G3D1608DT1TX0 2GB

Crucial Technology BLT2G3D1608DT1TX0 2GB

总分

Neo Forza GKE160SO204808-3200 16GB

Neo Forza GKE160SO204808-3200 16GB

差异规格评论

差异

Crucial Technology BLT2G3D1608DT1TX0 2GB

需要考虑的原因
Crucial Technology BLT2G3D1608DT1TX0 2GB

报告一个错误

低于PassMark测试中的延时，ns

23 63

左右 63% 更低的延时

Neo Forza GKE160SO204808-3200 16GB

需要考虑的原因
Neo Forza GKE160SO204808-3200 16GB

报告一个错误

更快的读取速度，GB/s

14.7 13.6

测试中的平均数值
更快的写入速度，GB/s

12.7 9.4

测试中的平均数值
更高的内存带宽，mbps

25600 10600

左右 2.42 更高的带宽

规格

完整的技术规格清单

Crucial Technology BLT2G3D1608DT1TX0 2GB

Neo Forza GKE160SO204808-3200 16GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

23 63
读取速度，GB/s

13.6 14.7
写入速度，GB/s

9.4 12.7
内存带宽，mbps

10600 25600

Other

描述

PC3-10600, 1.5V, CAS Supported: 5 6 7 8 9 10 PC4-25600, 1.2V, CAS Supported: 11 12 13 14 15 16 17 18 19 20 21 22
时序/时钟速度

7-7-7-20 / 1333 MHz 20-20-20, 22-22-22, 24-24-24 / 3200 MHz
排名PassMark (越多越好)

2096 2543

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Neo Forza GKE160SO204808-3200 16GB

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TwinMOS 8DPT5MK8-TATP 2GB

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Kingston 9905458-017.A01LF 4GB

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G Skill Intl F4-5066C20-8GVK 8GB

G Skill Intl F4-5066C20-8GVK 8GB

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SK Hynix HMT31GR7CFR4C-PB 8GB

Kingston 9905599-026.A00G 8GB

Kingston 9905599-026.A00G 8GB

Kingmax Semiconductor FLFE85F-C8KL9 2GB

Kingmax Semiconductor FLFE85F-C8KL9 2GB

Apacer Technology 78.CAGNT.AR40B 8GB

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Corsair CMZ16GX3M2A2400C10 8GB

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Kingston 9965589-007.D01G 8GB

Kingston 9965589-007.D01G 8GB

Samsung M393B5170FH0-CK0 4GB

Samsung M393B5170FH0-CK0 4GB

Dust Leopard DDR4-2400 C17 8GB 8GB

Dust Leopard DDR4-2400 C17 8GB 8GB