Crucial Technology BLT2G3D1608DT1TX0 2GB vs Samsung M393A1G40DB1-CRC 8GB

总分

Crucial Technology BLT2G3D1608DT1TX0 2GB

Crucial Technology BLT2G3D1608DT1TX0 2GB

总分

Samsung M393A1G40DB1-CRC 8GB

Samsung M393A1G40DB1-CRC 8GB

差异规格评论

差异

Crucial Technology BLT2G3D1608DT1TX0 2GB

需要考虑的原因
Crucial Technology BLT2G3D1608DT1TX0 2GB

报告一个错误

低于PassMark测试中的延时，ns

23 48

左右 52% 更低的延时
更快的读取速度，GB/s

13.6 10.8

测试中的平均数值
更快的写入速度，GB/s

9.4 8.1

测试中的平均数值

Samsung M393A1G40DB1-CRC 8GB

需要考虑的原因
Samsung M393A1G40DB1-CRC 8GB

报告一个错误

更高的内存带宽，mbps

19200 10600

左右 1.81 更高的带宽

规格

完整的技术规格清单

Crucial Technology BLT2G3D1608DT1TX0 2GB

Samsung M393A1G40DB1-CRC 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

23 48
读取速度，GB/s

13.6 10.8
写入速度，GB/s

9.4 8.1
内存带宽，mbps

10600 19200

Other

描述

PC3-10600, 1.5V, CAS Supported: 5 6 7 8 9 10 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
时序/时钟速度

7-7-7-20 / 1333 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

2096 2431

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Corsair CMK64GX4M4C3333C16 16GB

Corsair CMK64GX4M4C3333C16 16GB

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Panram International Corporation W4N2400PS-8G 8GB

Panram International Corporation W4N2400PS-8G 8GB

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Avexir Technologies Corporation DDR4-3200 C16 8GB 8GB

A-DATA Technology AD5U48008G-B 8GB

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Kingston 99U5712-009.A00G 16GB

Kingston 99U5712-009.A00G 16GB

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Kingston 9905622-057.A00G 4GB