Crucial Technology BLT2G3D1608DT1TX0 2GB vs SK Hynix HMA82GS7AFR8N-UH 16GB

总分

Crucial Technology BLT2G3D1608DT1TX0 2GB

Crucial Technology BLT2G3D1608DT1TX0 2GB

总分

SK Hynix HMA82GS7AFR8N-UH 16GB

SK Hynix HMA82GS7AFR8N-UH 16GB

差异规格评论

差异

Crucial Technology BLT2G3D1608DT1TX0 2GB

需要考虑的原因
Crucial Technology BLT2G3D1608DT1TX0 2GB

报告一个错误

低于PassMark测试中的延时，ns

23 28

左右 18% 更低的延时

SK Hynix HMA82GS7AFR8N-UH 16GB

需要考虑的原因
SK Hynix HMA82GS7AFR8N-UH 16GB

报告一个错误

更快的读取速度，GB/s

13.7 13.6

测试中的平均数值
更快的写入速度，GB/s

10.4 9.4

测试中的平均数值
更高的内存带宽，mbps

19200 10600

左右 1.81 更高的带宽

规格

完整的技术规格清单

Crucial Technology BLT2G3D1608DT1TX0 2GB

SK Hynix HMA82GS7AFR8N-UH 16GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

23 28
读取速度，GB/s

13.6 13.7
写入速度，GB/s

9.4 10.4
内存带宽，mbps

10600 19200

Other

描述

PC3-10600, 1.5V, CAS Supported: 5 6 7 8 9 10 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
时序/时钟速度

7-7-7-20 / 1333 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

2096 2558

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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Transcend Information TS512MSH64V1H 4GB

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Samsung M471B5273DH0-CH9 4GB

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Kingmax Semiconductor GLNH23F-18---------- 16GB

Kingmax Semiconductor GLNH23F-18---------- 16GB

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Corsair CMZ16GX3M2A2400C10 8GB

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Crucial Technology CT16G4SFD824A.M16FD1 16GB

Samsung M393B1K70CH0-CH9 8GB

Samsung M393B1K70CH0-CH9 8GB

Micron Technology 36ASF4G72LZ-2G3A1 32GB

Micron Technology 36ASF4G72LZ-2G3A1 32GB

Nanya Technology M2X4G64CB8HG9N-DG 4GB

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SK Hynix GKE160UD102408-2133 16GB

SK Hynix GKE160UD102408-2133 16GB

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Crucial Technology BLT4G4D30AETA.K8FD 4GB

Crucial Technology BLT4G4D30AETA.K8FD 4GB