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Crucial Technology CT102464BA160B.M16 8GB
G Skill Intl F4-3200C14-16GTZSW 16GB

Crucial Technology CT102464BA160B.M16 8GB vs G Skill Intl F4-3200C14-16GTZSW 16GB

总分
star star star star star
Crucial Technology CT102464BA160B.M16 8GB

Crucial Technology CT102464BA160B.M16 8GB

总分
star star star star star
G Skill Intl F4-3200C14-16GTZSW 16GB

G Skill Intl F4-3200C14-16GTZSW 16GB

差异 规格 评论

差异

Crucial Technology CT102464BA160B.M16 8GB 需要考虑的原因
Crucial Technology CT102464BA160B.M16 8GB
报告一个错误
G Skill Intl F4-3200C14-16GTZSW 16GB 需要考虑的原因
G Skill Intl F4-3200C14-16GTZSW 16GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    26 left arrow 40
    左右 -54% 更低的延时
  • 更快的读取速度，GB/s
    20.6 left arrow 12.6
    测试中的平均数值
  • 更快的写入速度，GB/s
    16.7 left arrow 7.8
    测试中的平均数值
  • 更高的内存带宽，mbps
    17000 left arrow 12800
    左右 1.33 更高的带宽

规格

完整的技术规格清单
Crucial Technology CT102464BA160B.M16 8GB
G Skill Intl F4-3200C14-16GTZSW 16GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    40 left arrow 26
  • 读取速度，GB/s
    12.6 left arrow 20.6
  • 写入速度，GB/s
    7.8 left arrow 16.7
  • 内存带宽，mbps
    12800 left arrow 17000
Other
  • 描述
    PC3-12800, 1.5V, CAS Supported: 5 6 7 8 9 10 11 left arrow PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
  • 时序/时钟速度
    9-9-9-24 / 1600 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • 排名PassMark (越多越好)
    2209 left arrow 4084

Crucial Technology CT102464BA160B.M16 8GB RAM的比较

Corsair CMZ16GX3M2A1600C9 8GB
Essencore Limited IM48GU48A32-GIISMZ 8GB

G Skill Intl F4-3200C14-16GTZSW 16GB RAM的比较

Crucial Technology BLS4G4D240FSE.8FBD 4GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

Crucial Technology CT102464BF160B-16F 8GB
Crucial Technology CT102464BF160B-16F 8GB
Apacer Technology 76.D105G.D090B 16GB
Apacer Technology 76.D105G.D090B 16GB
内存RAM
Samsung M391B5673EH1-CH9 2GB
Samsung M391B5673EH1-CH9 2GB
Corsair CM4X4GF2666C16K4 4GB
Corsair CM4X4GF2666C16K4 4GB
内存RAM
Kingston 2GB-DDR2 800Mhz 2GB
Kingston 2GB-DDR2 800Mhz 2GB
SK Hynix Kingston 4GB
SK Hynix Kingston 4GB
内存RAM
AMD R538G1601U2S-UO 8GB
AMD R538G1601U2S-UO 8GB
Hynix Semiconductor (Hyundai Electronics) HMA41GR7AFR4N-UH 8GB
Hynix Semiconductor (Hyundai Electronics) HMA41GR7AFR4N
内存RAM
Samsung M471A4G43MB1-CTD 32GB
Samsung M471A4G43MB1-CTD 32GB
SK Hynix HMAA4GS6MJR8N-VK 32GB
SK Hynix HMAA4GS6MJR8N-VK 32GB
内存RAM
Hexon Technology Pte Ltd HEXON 1GB
Hexon Technology Pte Ltd HEXON 1GB
SK Hynix HMA82GS6CJR8N-UH 16GB
SK Hynix HMA82GS6CJR8N-UH 16GB
内存RAM
Samsung M393B1G70BH0-YK0 8GB
Samsung M393B1G70BH0-YK0 8GB
Corsair CMR32GX4M4C3333C16 8GB
Corsair CMR32GX4M4C3333C16 8GB
内存RAM
Kingston 9965516-112.A00LF 16GB
Kingston 9965516-112.A00LF 16GB
Shenzhen Xingmem Technology Corp CM4X8GF2666C1XMP 8GB
Shenzhen Xingmem Technology Corp CM4X8GF2666C1XMP 8GB
内存RAM
Mushkin 996902 2GB
Mushkin 996902 2GB
Micron Technology 18ASF1G72PZ-2G1A2 8GB
Micron Technology 18ASF1G72PZ-2G1A2 8GB
内存RAM
G Skill Intl F2-8500CL5-2GBPI 2GB
G Skill Intl F2-8500CL5-2GBPI 2GB
EVGA 8GX-D4-3200-MR 8GB
EVGA 8GX-D4-3200-MR 8GB
内存RAM
Ramaxel Technology RMR5040ED58E9W1600 4GB
Ramaxel Technology RMR5040ED58E9W1600 4GB
G Skill Intl F4-4800C18-8GTRS 8GB
G Skill Intl F4-4800C18-8GTRS 8GB
内存RAM
Kingston 9905702-010.A00G 8GB
Kingston 9905702-010.A00G 8GB
EVGA 8GX-D4-3000-MR 8GB
EVGA 8GX-D4-3000-MR 8GB
内存RAM
Corsair CM3X8GA2400C11Y2R 8GB
Corsair CM3X8GA2400C11Y2R 8GB
Avexir Technologies Corporation DDR4-3000 CL17 8GB 8GB
Avexir Technologies Corporation DDR4-3000 CL17 8GB 8GB
内存RAM
G Skill Intl F3-14900CL8-4GBXM 4GB
G Skill Intl F3-14900CL8-4GBXM 4GB
Corsair CMV4GX4M1A2666C18 4GB
Corsair CMV4GX4M1A2666C18 4GB
内存RAM