Crucial Technology CT102464BD160B.M16 8GB vs Samsung M386A8K40BMB-CPB 64GB

总分

Crucial Technology CT102464BD160B.M16 8GB

Crucial Technology CT102464BD160B.M16 8GB

总分

Samsung M386A8K40BMB-CPB 64GB

Samsung M386A8K40BMB-CPB 64GB

差异规格评论

差异

Crucial Technology CT102464BD160B.M16 8GB

需要考虑的原因
Crucial Technology CT102464BD160B.M16 8GB

报告一个错误

更快的读取速度，GB/s

14.2 9.1

测试中的平均数值
更快的写入速度，GB/s

8.9 8.3

测试中的平均数值

Samsung M386A8K40BMB-CPB 64GB

需要考虑的原因
Samsung M386A8K40BMB-CPB 64GB

报告一个错误

低于PassMark测试中的延时，ns

35 41

左右 -17% 更低的延时
更高的内存带宽，mbps

17000 12800

左右 1.33 更高的带宽

规格

完整的技术规格清单

Crucial Technology CT102464BD160B.M16 8GB

Samsung M386A8K40BMB-CPB 64GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

41 35
读取速度，GB/s

14.2 9.1
写入速度，GB/s

8.9 8.3
内存带宽，mbps

12800 17000

Other

描述

PC3-12800, 1.5V, 1.35V , CAS Supported: 5 6 7 8 9 10 11 PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
时序/时钟速度

9-9-9-24 / 1600 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

2412 2229

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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G Skill Intl F4-2400C17-4GFT 4GB

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SK Hynix MMA82GS6CJR8N-VK 16GB

SK Hynix MMA82GS6CJR8N-VK 16GB

Crucial Technology CT51264BA1339.C16F 4GB

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SK Hynix HMA81GU6AFR8N-UH 8GB

SK Hynix HMA81GU6AFR8N-UH 8GB

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Elpida EBJ41UF8BDU5-GN-F 4GB

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AMD R5316G1609U2K 8GB

AMD R5316G1609U2K 8GB

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Crucial Technology BL32G36C16U4B.M16FB1 32GB

Samsung M471B5173DB0-YK0 4GB

Samsung M471B5173DB0-YK0 4GB

G Skill Intl F4-2800C18-8GRS 8GB

G Skill Intl F4-2800C18-8GRS 8GB

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Nanya Technology NT4GC64B8HG0NS-CG 4GB

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G Skill Intl F4-2800C15-4GVR 4GB

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Samsung M4 70T2864QZ3-CF7 1GB

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Crucial Technology CT8G4SFRA32A.M8FRS 8GB