Crucial Technology CT102464BF160B-16F 8GB vs Corsair CMT32GX4M4Z3200C16 8GB

总分

Crucial Technology CT102464BF160B-16F 8GB

Crucial Technology CT102464BF160B-16F 8GB

总分

Corsair CMT32GX4M4Z3200C16 8GB

Corsair CMT32GX4M4Z3200C16 8GB

差异规格评论

差异

Crucial Technology CT102464BF160B-16F 8GB

需要考虑的原因
Crucial Technology CT102464BF160B-16F 8GB

报告一个错误

Corsair CMT32GX4M4Z3200C16 8GB

需要考虑的原因
Corsair CMT32GX4M4Z3200C16 8GB

报告一个错误

低于PassMark测试中的延时，ns

27 29

左右 -7% 更低的延时
更快的读取速度，GB/s

18.5 12.8

测试中的平均数值
更快的写入速度，GB/s

16.0 9.4

测试中的平均数值
更高的内存带宽，mbps

21300 12800

左右 1.66 更高的带宽

规格

完整的技术规格清单

Crucial Technology CT102464BF160B-16F 8GB

Corsair CMT32GX4M4Z3200C16 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

29 27
读取速度，GB/s

12.8 18.5
写入速度，GB/s

9.4 16.0
内存带宽，mbps

12800 21300

Other

描述

PC3-12800, 1.5V, 1.35V , CAS Supported: 6 7 8 9 10 11 PC4-21300, 1.2V, CAS Supported: 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24
时序/时钟速度

9-9-9-24 / 1600 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

2282 3873

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

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RAM 2

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Hexon Technology Pte Ltd HEXON 1GB

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Crucial Technology CT51264BD160B.C16F 4GB

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InnoDisk Corporation M4C0-AGS1TCIK 16GB

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Samsung M378T5663QZ3-CF7 2GB

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G Skill Intl F4-2400C16-8GRS 8GB

Ramos Technology EWB8GB681CA3-16IC 8GB

Ramos Technology EWB8GB681CA3-16IC 8GB

Crucial Technology BLS16G4D26BFSC.16FD 16GB

Crucial Technology BLS16G4D26BFSC.16FD 16GB

SK Hynix HMAA2GU6AJR8N-XN 16GB

SK Hynix HMAA2GU6AJR8N-XN 16GB

Corsair CMK32GX4M2E3200C16 16GB

Corsair CMK32GX4M2E3200C16 16GB

Kingston KVR800D2N6/2G 2GB

Kingston KVR800D2N6/2G 2GB

Corsair CMW32GX4M2E3200C16 16GB

Corsair CMW32GX4M2E3200C16 16GB

Samsung M4 70T5663EH3-CF7 2GB

Samsung M4 70T5663EH3-CF7 2GB

Samsung M4 70T5663RZ3-CF7 2GB

Samsung M4 70T5663RZ3-CF7 2GB