Crucial Technology CT102464BF160B-16F 8GB vs Kingmax Semiconductor GLAG43F-18---------- 8GB

总分

Crucial Technology CT102464BF160B-16F 8GB

Crucial Technology CT102464BF160B-16F 8GB

总分

Kingmax Semiconductor GLAG43F-18---------- 8GB

Kingmax Semiconductor GLAG43F-18---------- 8GB

差异规格评论

差异

Crucial Technology CT102464BF160B-16F 8GB

需要考虑的原因
Crucial Technology CT102464BF160B-16F 8GB

报告一个错误

低于PassMark测试中的延时，ns

29 40

左右 28% 更低的延时

Kingmax Semiconductor GLAG43F-18---------- 8GB

需要考虑的原因
Kingmax Semiconductor GLAG43F-18---------- 8GB

报告一个错误

更快的读取速度，GB/s

15.7 12.8

测试中的平均数值
更快的写入速度，GB/s

11.6 9.4

测试中的平均数值
更高的内存带宽，mbps

21300 12800

左右 1.66 更高的带宽

规格

完整的技术规格清单

Crucial Technology CT102464BF160B-16F 8GB

Kingmax Semiconductor GLAG43F-18---------- 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

29 40
读取速度，GB/s

12.8 15.7
写入速度，GB/s

9.4 11.6
内存带宽，mbps

12800 21300

Other

描述

PC3-12800, 1.5V, 1.35V , CAS Supported: 6 7 8 9 10 11 PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 23
时序/时钟速度

9-9-9-24 / 1600 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

2282 2972

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Crucial Technology CT102464BF160B-16F 8GB

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Kingmax Semiconductor GLAG43F-18---------- 8GB

Kingmax Semiconductor GLAG43F-18---------- 8GB

Samsung M4 70T2953EZ3-CE6 1GB

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Shanghai Kuxin Microelectronics Ltd NMSO416E82-2400E 16

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Patriot Memory (PDP Systems) 2400 C14 Series 8GB

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Crucial Technology BLS8G3N18AES4.16FE 8GB

Crucial Technology BLS4G4D240FSA.M8F 4GB

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Samsung DDR3 8GB 1600MHz 8GB

Samsung DDR3 8GB 1600MHz 8GB

Corsair CM4X16GD3200C16K4E 16GB

Corsair CM4X16GD3200C16K4E 16GB

Samsung M378B5673FH0-CH9 2GB

Samsung M378B5673FH0-CH9 2GB

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Samsung M393B2G70BH0-CH9 16GB

Corsair CMK32GX4M2C3333C16 16GB

Corsair CMK32GX4M2C3333C16 16GB