Crucial Technology CT102464BF160B.C16 8GB vs Crucial Technology BLS8G4D26BFSE.16FB 8GB

总分

Crucial Technology CT102464BF160B.C16 8GB

Crucial Technology CT102464BF160B.C16 8GB

总分

Crucial Technology BLS8G4D26BFSE.16FB 8GB

Crucial Technology BLS8G4D26BFSE.16FB 8GB

差异规格评论

差异

Crucial Technology CT102464BF160B.C16 8GB

需要考虑的原因
Crucial Technology CT102464BF160B.C16 8GB

报告一个错误

Crucial Technology BLS8G4D26BFSE.16FB 8GB

需要考虑的原因
Crucial Technology BLS8G4D26BFSE.16FB 8GB

报告一个错误

低于PassMark测试中的延时，ns

26 44

左右 -69% 更低的延时
更快的读取速度，GB/s

16.5 12.6

测试中的平均数值
更快的写入速度，GB/s

10.1 8.6

测试中的平均数值
更高的内存带宽，mbps

21300 12800

左右 1.66 更高的带宽

规格

完整的技术规格清单

Crucial Technology CT102464BF160B.C16 8GB

Crucial Technology BLS8G4D26BFSE.16FB 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

44 26
读取速度，GB/s

12.6 16.5
写入速度，GB/s

8.6 10.1
内存带宽，mbps

12800 21300

Other

描述

PC3-12800, 1.5V, 1.35V , CAS Supported: 6 7 8 9 10 11 PC4-21300, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16 18 20
时序/时钟速度

9-9-9-24 / 1600 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

2193 3025

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

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RAM 2

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最新比较

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Crucial Technology CT102464BF160B.C16 8GB

Crucial Technology CT102464BF160B.C16 8GB

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Samsung M378B5673EH1-CF8 2GB

Samsung M378B5673EH1-CF8 2GB

Gloway International Co. Ltd. STK4U2400D17082C 8GB

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Kingston 9905702-010.A00G 8GB

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Corsair CM4X4GF2400C14K4 4GB

Corsair CM4X4GF2400C14K4 4GB

Samsung M391B5673EH1-CH9 2GB

Samsung M391B5673EH1-CH9 2GB

SK Hynix HMA84GL7MMR4N-TF 32GB

SK Hynix HMA84GL7MMR4N-TF 32GB

AMD AE34G1601U1 4GB

AMD AE34G1601U1 4GB

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Kingston CBD26D4S9S8ME-8 8GB