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Crucial Technology CT102464BF160B.C16 8GB
Hynix Semiconductor (Hyundai Electronics) HMA81GU6CJR8N-UH 8GB
比较
Crucial Technology CT102464BF160B.C16 8GB vs Hynix Semiconductor (Hyundai Electronics) HMA81GU6CJR8N-UH 8GB
总分
Crucial Technology CT102464BF160B.C16 8GB
总分
Hynix Semiconductor (Hyundai Electronics) HMA81GU6CJR8N-UH 8GB
差异
规格
评论
差异
需要考虑的原因
Crucial Technology CT102464BF160B.C16 8GB
报告一个错误
需要考虑的原因
Hynix Semiconductor (Hyundai Electronics) HMA81GU6CJR8N-UH 8GB
报告一个错误
低于PassMark测试中的延时,ns
28
44
左右 -57% 更低的延时
更快的读取速度,GB/s
16.2
12.6
测试中的平均数值
更快的写入速度,GB/s
12.7
8.6
测试中的平均数值
更高的内存带宽,mbps
19200
12800
左右 1.5 更高的带宽
规格
完整的技术规格清单
Crucial Technology CT102464BF160B.C16 8GB
Hynix Semiconductor (Hyundai Electronics) HMA81GU6CJR8N-UH 8GB
主要特点
存储器类型
DDR3
DDR4
PassMark中的延时,ns
44
28
读取速度,GB/s
12.6
16.2
写入速度,GB/s
8.6
12.7
内存带宽,mbps
12800
19200
Other
描述
PC3-12800, 1.5V, 1.35V , CAS Supported: 6 7 8 9 10 11
PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
时序/时钟速度
9-9-9-24 / 1600 MHz
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)
2193
2417
Crucial Technology CT102464BF160B.C16 8GB RAM的比较
Samsung M471B1G73QH0-YK0 8GB
Apacer Technology AQD-D4U8GN26-SE 8GB
Hynix Semiconductor (Hyundai Electronics) HMA81GU6CJR8N-UH 8GB RAM的比较
Samsung M3 78T3354BZ0-CCC 256MB
Crucial Technology CT51264BF160BJ.M8F 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
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报告一个错误
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