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Crucial Technology CT102464BF160B.C16 8GB
Hynix Semiconductor (Hyundai Electronics) HMT41GS6BFR8A-PB 8GB

Crucial Technology CT102464BF160B.C16 8GB vs Hynix Semiconductor (Hyundai Electronics) HMT41GS6BFR8A-PB 8GB

总分
star star star star star
Crucial Technology CT102464BF160B.C16 8GB

Crucial Technology CT102464BF160B.C16 8GB

总分
star star star star star
Hynix Semiconductor (Hyundai Electronics) HMT41GS6BFR8A-PB 8GB

Hynix Semiconductor (Hyundai Electronics) HMT41GS6BFR8A-PB 8GB

差异 规格 评论

差异

Crucial Technology CT102464BF160B.C16 8GB 需要考虑的原因
Crucial Technology CT102464BF160B.C16 8GB
报告一个错误
  • 更快的读取速度，GB/s
    12.6 left arrow 11.2
    测试中的平均数值
  • 更快的写入速度，GB/s
    8.6 left arrow 7.6
    测试中的平均数值
Hynix Semiconductor (Hyundai Electronics) HMT41GS6BFR8A-PB 8GB 需要考虑的原因
Hynix Semiconductor (Hyundai Electronics) HMT41GS6BFR8A-PB 8GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    31 left arrow 44
    左右 -42% 更低的延时

规格

完整的技术规格清单
Crucial Technology CT102464BF160B.C16 8GB
Hynix Semiconductor (Hyundai Electronics) HMT41GS6BFR8A-PB 8GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR3
  • PassMark中的延时，ns
    44 left arrow 31
  • 读取速度，GB/s
    12.6 left arrow 11.2
  • 写入速度，GB/s
    8.6 left arrow 7.6
  • 内存带宽，mbps
    12800 left arrow 12800
Other
  • 描述
    PC3-12800, 1.5V, 1.35V , CAS Supported: 6 7 8 9 10 11 left arrow PC3-12800, 1.5V, 1.35V , CAS Supported: 5 6 7 8 9 10 11
  • 时序/时钟速度
    9-9-9-24 / 1600 MHz left arrow 9-9-9-24 / 1600 MHz
  • 排名PassMark (越多越好)
    2193 left arrow 2026

Crucial Technology CT102464BF160B.C16 8GB RAM的比较

Samsung M471B1G73QH0-YK0 8GB
Apacer Technology AQD-D4U8GN26-SE 8GB

Hynix Semiconductor (Hyundai Electronics) HMT41GS6BFR8A-PB 8GB RAM的比较

SK Hynix HMT451S6BFR8A-PB 4GB
NXP (Philips) HMT351S6CFR8C-H9 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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