Crucial Technology CT102464BF160B.C16 8GB vs Micron Technology TEAMGROUP-UD4-3000 16GB

总分

Crucial Technology CT102464BF160B.C16 8GB

Crucial Technology CT102464BF160B.C16 8GB

总分

Micron Technology TEAMGROUP-UD4-3000 16GB

Micron Technology TEAMGROUP-UD4-3000 16GB

差异规格评论

差异

Crucial Technology CT102464BF160B.C16 8GB

需要考虑的原因
Crucial Technology CT102464BF160B.C16 8GB

报告一个错误

Micron Technology TEAMGROUP-UD4-3000 16GB

需要考虑的原因
Micron Technology TEAMGROUP-UD4-3000 16GB

报告一个错误

低于PassMark测试中的延时，ns

22 44

左右 -100% 更低的延时
更快的读取速度，GB/s

17 12.6

测试中的平均数值
更快的写入速度，GB/s

11.9 8.6

测试中的平均数值
更高的内存带宽，mbps

17000 12800

左右 1.33 更高的带宽

规格

完整的技术规格清单

Crucial Technology CT102464BF160B.C16 8GB

Micron Technology TEAMGROUP-UD4-3000 16GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

44 22
读取速度，GB/s

12.6 17.0
写入速度，GB/s

8.6 11.9
内存带宽，mbps

12800 17000

Other

描述

PC3-12800, 1.5V, 1.35V , CAS Supported: 6 7 8 9 10 11 PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16 18
时序/时钟速度

9-9-9-24 / 1600 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

2193 3112

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Samsung M393B1K70CH0-CH9 8GB

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Corsair CMW64GX4M4E3200C16 16GB

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Samsung DDR3 8GB 1600MHz 8GB

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Wilk Elektronik S.A. GR2400D464L17S/4G 4GB

Corsair VSA2GSDS667C4 2GB

Corsair VSA2GSDS667C4 2GB

Golden Empire CL16-16-16 D4-2400 8GB

Golden Empire CL16-16-16 D4-2400 8GB

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G Skill Intl F4-3000C15-8GTZB 8GB

G Skill Intl F4-3000C15-8GTZB 8GB

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