Crucial Technology CT102464BF160B.M16 8GB vs Samsung M471B1G73QH0-YK0 8GB

总分

Crucial Technology CT102464BF160B.M16 8GB

Crucial Technology CT102464BF160B.M16 8GB

总分

Samsung M471B1G73QH0-YK0 8GB

Samsung M471B1G73QH0-YK0 8GB

差异规格评论

差异

Crucial Technology CT102464BF160B.M16 8GB

需要考虑的原因
Crucial Technology CT102464BF160B.M16 8GB

报告一个错误

低于PassMark测试中的延时，ns

45 47

左右 4% 更低的延时
更快的读取速度，GB/s

12.8 11.8

测试中的平均数值
更快的写入速度，GB/s

8.5 8.0

测试中的平均数值

Samsung M471B1G73QH0-YK0 8GB

需要考虑的原因
Samsung M471B1G73QH0-YK0 8GB

报告一个错误

规格

完整的技术规格清单

Crucial Technology CT102464BF160B.M16 8GB

Samsung M471B1G73QH0-YK0 8GB

主要特点

存储器类型

DDR3 DDR3
PassMark中的延时，ns

45 47
读取速度，GB/s

12.8 11.8
写入速度，GB/s

8.5 8.0
内存带宽，mbps

12800 12800

Other

描述

PC3-12800, 1.5V, 1.35V , CAS Supported: 5 6 7 8 9 10 11 PC3-12800, 1.5V, 1.35V , CAS Supported: 5 6 7 8 9 10 11
时序/时钟速度

9-9-9-24 / 1600 MHz 9-9-9-24 / 1600 MHz
排名PassMark (越多越好)

2173 2061

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Hynix Semiconductor (Hyundai Electronics) HMT41GS6MFR8A

Corsair CMK64GX4M4K3733C17 16GB

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Crucial Technology CT102464BF160B.M16 8GB

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Micron Technology 18HTF12872AY-800F1 1GB

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Crucial Technology BL16G26C16U4W.16FD 16GB

Crucial Technology CT102464BA160B.M16 8GB

Crucial Technology CT102464BA160B.M16 8GB

Kingston KHX2133C14D4/8G 8GB

Kingston KHX2133C14D4/8G 8GB