Crucial Technology CT25664AA800.M16FG 2GB vs Corsair CMK32GX4M2D3200C16 16GB

总分

Crucial Technology CT25664AA800.M16FG 2GB

Crucial Technology CT25664AA800.M16FG 2GB

总分

Corsair CMK32GX4M2D3200C16 16GB

Corsair CMK32GX4M2D3200C16 16GB

差异规格评论

差异

Crucial Technology CT25664AA800.M16FG 2GB

需要考虑的原因
Crucial Technology CT25664AA800.M16FG 2GB

报告一个错误

更快的读取速度，GB/s

4 18

测试中的平均数值
更快的写入速度，GB/s

2,027.0 14.4

测试中的平均数值

Corsair CMK32GX4M2D3200C16 16GB

需要考虑的原因
Corsair CMK32GX4M2D3200C16 16GB

报告一个错误

低于PassMark测试中的延时，ns

28 52

左右 -86% 更低的延时
更高的内存带宽，mbps

17000 6400

左右 2.66 更高的带宽

规格

完整的技术规格清单

Crucial Technology CT25664AA800.M16FG 2GB

Corsair CMK32GX4M2D3200C16 16GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

52 28
读取速度，GB/s

4,837.1 18.0
写入速度，GB/s

2,027.0 14.4
内存带宽，mbps

6400 17000

Other

描述

PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6 PC4-17000, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16
时序/时钟速度

5-5-5-15 / 800 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

794 3611

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

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Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Crucial Technology CT25664AA800.M16FG 2GB

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Corsair CMK32GX4M2D3200C16 16GB

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Corsair CMX4GX3M2A1600C9 2GB

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Crucial Technology CT25664AA800.M16FM 2GB

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Samsung M378B5173BH0-CH9 4GB

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SK Hynix HMA41GR7MFR4N-TF 8GB

Samsung M393B5270CH0-CH9 4GB

Samsung M393B5270CH0-CH9 4GB

Corsair CMSO8GX4M1A2133C15 8GB

Corsair CMSO8GX4M1A2133C15 8GB

Nanya Technology NT4GC64B8HG0NS-CG 4GB

Nanya Technology NT4GC64B8HG0NS-CG 4GB

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Wilk Elektronik S.A. GY2666D464L16/8G 8GB

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Samsung M4 70T5663CZ3-CE6 2GB

Crucial Technology BLS16G4D30AESE.M16FE 16GB

Crucial Technology BLS16G4D30AESE.M16FE 16GB