Crucial Technology CT25664AA800.M16FG 2GB vs G Skill Intl F4-3400C16-16GTZ 16GB

总分

Crucial Technology CT25664AA800.M16FG 2GB

Crucial Technology CT25664AA800.M16FG 2GB

总分

G Skill Intl F4-3400C16-16GTZ 16GB

G Skill Intl F4-3400C16-16GTZ 16GB

差异规格评论

差异

Crucial Technology CT25664AA800.M16FG 2GB

需要考虑的原因
Crucial Technology CT25664AA800.M16FG 2GB

报告一个错误

更快的读取速度，GB/s

4 17.9

测试中的平均数值
更快的写入速度，GB/s

2,027.0 13.8

测试中的平均数值

G Skill Intl F4-3400C16-16GTZ 16GB

需要考虑的原因
G Skill Intl F4-3400C16-16GTZ 16GB

报告一个错误

低于PassMark测试中的延时，ns

22 52

左右 -136% 更低的延时
更高的内存带宽，mbps

17000 6400

左右 2.66 更高的带宽

规格

完整的技术规格清单

Crucial Technology CT25664AA800.M16FG 2GB

G Skill Intl F4-3400C16-16GTZ 16GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

52 22
读取速度，GB/s

4,837.1 17.9
写入速度，GB/s

2,027.0 13.8
内存带宽，mbps

6400 17000

Other

描述

PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6 PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
时序/时钟速度

5-5-5-15 / 800 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

794 3297

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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Samsung M393B2G70BH0-CK0 16GB

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Ramaxel Technology RMSA3300MH78HBF-2666 16GB

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A-DATA Technology AX4S2800316G18-B 16GB

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Gold Key Technology Co Ltd NMGD480E82-3200D 8GB

Samsung M3 78T2863EHS-CF7 1GB

Samsung M3 78T2863EHS-CF7 1GB

Micron Technology 8R8F1G64HZ-2G3B1 8GB

Micron Technology 8R8F1G64HZ-2G3B1 8GB

Ramaxel Technology RMR5030ME68F9F1600 4GB

Ramaxel Technology RMR5030ME68F9F1600 4GB

Gold Key Technology Co Ltd GKE400SO51216-2400 4GB

Gold Key Technology Co Ltd GKE400SO51216-2400 4GB

Wilk Elektronik S.A. GY1866D364L9A/4G 4GB

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Crucial Technology CT16G4SFD8213.M16FB 16GB

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Samsung M393B1G70BH0-YK0 8GB

G Skill Intl F4-3200C16-16GTZ 16GB

G Skill Intl F4-3200C16-16GTZ 16GB