Crucial Technology CT25664AA800.M16FM 2GB vs G Skill Intl F4-2666C18-32GTZN 32GB

总分

Crucial Technology CT25664AA800.M16FM 2GB

Crucial Technology CT25664AA800.M16FM 2GB

总分

G Skill Intl F4-2666C18-32GTZN 32GB

G Skill Intl F4-2666C18-32GTZN 32GB

差异规格评论

差异

Crucial Technology CT25664AA800.M16FM 2GB

需要考虑的原因
Crucial Technology CT25664AA800.M16FM 2GB

报告一个错误

更快的读取速度，GB/s

5 19.1

测试中的平均数值
更快的写入速度，GB/s

2,135.0 15.5

测试中的平均数值

G Skill Intl F4-2666C18-32GTZN 32GB

需要考虑的原因
G Skill Intl F4-2666C18-32GTZN 32GB

报告一个错误

低于PassMark测试中的延时，ns

31 51

左右 -65% 更低的延时
更高的内存带宽，mbps

21300 6400

左右 3.33 更高的带宽

规格

完整的技术规格清单

Crucial Technology CT25664AA800.M16FM 2GB

G Skill Intl F4-2666C18-32GTZN 32GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

51 31
读取速度，GB/s

5,021.4 19.1
写入速度，GB/s

2,135.0 15.5
内存带宽，mbps

6400 21300

Other

描述

PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6 PC4-21300, 1.2V, CAS Supported: 13 14 15 16 17 18
时序/时钟速度

5-5-5-15 / 800 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

855 3753

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

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RAM 2

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最新比较

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Crucial Technology BLS8G4D240FSCK.8FD 8GB

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Peak Electronics 256X64M-67E 2GB

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SK Hynix HMA41GR7AFR4N-UH 8GB

Samsung M3 78T2863QZS-CF7 1GB

Samsung M3 78T2863QZS-CF7 1GB

A-DATA Technology AO1P24HC4N2-BYNS 4GB

A-DATA Technology AO1P24HC4N2-BYNS 4GB

Crucial Technology CT51264AC800.C16FC 4GB

Crucial Technology CT51264AC800.C16FC 4GB

Gloway International Co. Ltd. TYA4U2666D19161C 16GB

Gloway International Co. Ltd. TYA4U2666D19161C 16GB

Crucial Technology BLT2G3D1608DT1TX0 2GB

Crucial Technology BLT2G3D1608DT1TX0 2GB

Micron Technology 36ASF4G72PZ-2G6H1 32GB

Micron Technology 36ASF4G72PZ-2G6H1 32GB

Kingston 9965525-155.A00LF 8GB

Kingston 9965525-155.A00LF 8GB

A-DATA Technology AM2P24HC8T1-BUSS 8GB

A-DATA Technology AM2P24HC8T1-BUSS 8GB