Crucial Technology CT25664AA800.M16FM 2GB vs G Skill Intl F4-3000C16-16GVRB 16GB

总分

Crucial Technology CT25664AA800.M16FM 2GB

Crucial Technology CT25664AA800.M16FM 2GB

总分

G Skill Intl F4-3000C16-16GVRB 16GB

G Skill Intl F4-3000C16-16GVRB 16GB

差异规格评论

差异

Crucial Technology CT25664AA800.M16FM 2GB

需要考虑的原因
Crucial Technology CT25664AA800.M16FM 2GB

报告一个错误

更快的读取速度，GB/s

5 16.9

测试中的平均数值
更快的写入速度，GB/s

2,135.0 13.2

测试中的平均数值

G Skill Intl F4-3000C16-16GVRB 16GB

需要考虑的原因
G Skill Intl F4-3000C16-16GVRB 16GB

报告一个错误

低于PassMark测试中的延时，ns

31 51

左右 -65% 更低的延时
更高的内存带宽，mbps

17000 6400

左右 2.66 更高的带宽

规格

完整的技术规格清单

Crucial Technology CT25664AA800.M16FM 2GB

G Skill Intl F4-3000C16-16GVRB 16GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

51 31
读取速度，GB/s

5,021.4 16.9
写入速度，GB/s

2,135.0 13.2
内存带宽，mbps

6400 17000

Other

描述

PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6 PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
时序/时钟速度

5-5-5-15 / 800 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

855 3300

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

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RAM 2

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最新比较

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A-DATA Technology VDQVE1B16 2GB

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G Skill Intl F4-3000C16-16GVRB 16GB

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Smart Modular SH564128FH8NZQNSCG 4GB

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Kingston K1N7HK-ELC 2GB

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Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

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Crucial Technology CT51264BD1339.M16F 4GB

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Micron Technology 4ATF51264AZ-2G3E1 4GB

Micron Technology 4ATF51264AZ-2G3E1 4GB

Samsung M393B2G70BH0-CK0 16GB

Samsung M393B2G70BH0-CK0 16GB

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G Skill Intl F4-3600C16-8GTZR 8GB

Corsair CMZ16GX3M2A2400C10 8GB

Corsair CMZ16GX3M2A2400C10 8GB

Apacer Technology 78.CAGN7.4000C 8GB

Apacer Technology 78.CAGN7.4000C 8GB

Samsung M471B5273EB0-CK0 4GB

Samsung M471B5273EB0-CK0 4GB

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G Skill Intl F4-2800C16-8GVR 8GB

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takeMS International AG TMS2GB264D082-805G 2GB

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Kingston 99U5702-094.A00G 8GB