RAM
DDR5
DDR4
DDR3
DDR2
关于本网站
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
关于本网站
zh
Русский Русский English English Español Español Português Português Deutsch Deutsch Français Français Italiano Italiano Polski Polski 中文 中文 日本語 日本語
Crucial Technology CT25664AA800.M16FM 2GB
Micron Technology 8ATF1G64AZ-2G1B1 8GB

Crucial Technology CT25664AA800.M16FM 2GB vs Micron Technology 8ATF1G64AZ-2G1B1 8GB

总分
star star star star star
Crucial Technology CT25664AA800.M16FM 2GB

Crucial Technology CT25664AA800.M16FM 2GB

总分
star star star star star
Micron Technology 8ATF1G64AZ-2G1B1 8GB

Micron Technology 8ATF1G64AZ-2G1B1 8GB

差异 规格 评论

差异

Crucial Technology CT25664AA800.M16FM 2GB 需要考虑的原因
Crucial Technology CT25664AA800.M16FM 2GB
报告一个错误
  • 更快的读取速度，GB/s
    5 left arrow 15.5
    测试中的平均数值
  • 更快的写入速度，GB/s
    2,135.0 left arrow 11.8
    测试中的平均数值
Micron Technology 8ATF1G64AZ-2G1B1 8GB 需要考虑的原因
Micron Technology 8ATF1G64AZ-2G1B1 8GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    32 left arrow 51
    左右 -59% 更低的延时
  • 更高的内存带宽，mbps
    17000 left arrow 6400
    左右 2.66 更高的带宽

规格

完整的技术规格清单
Crucial Technology CT25664AA800.M16FM 2GB
Micron Technology 8ATF1G64AZ-2G1B1 8GB
主要特点
  • 存储器类型
    DDR2 left arrow DDR4
  • PassMark中的延时，ns
    51 left arrow 32
  • 读取速度，GB/s
    5,021.4 left arrow 15.5
  • 写入速度，GB/s
    2,135.0 left arrow 11.8
  • 内存带宽，mbps
    6400 left arrow 17000
Other
  • 描述
    PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6 left arrow PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16 18 19
  • 时序/时钟速度
    5-5-5-15 / 800 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • 排名PassMark (越多越好)
    855 left arrow 2960

Crucial Technology CT25664AA800.M16FM 2GB RAM的比较

Kingston 9905471-006.A01LF 4GB
Smart Modular SF4641G8CKHI6DFSEG 8GB

Micron Technology 8ATF1G64AZ-2G1B1 8GB RAM的比较

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Kingston 9965525-155.A00LF 8GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

Kingston 9905316-106.A02LF 1GB
Kingston 9905316-106.A02LF 1GB
Kingston 9905663-005.A00G 16GB
Kingston 9905663-005.A00G 16GB
内存RAM
G Skill Intl F3-1866C8-8GTX 8GB
G Skill Intl F3-1866C8-8GTX 8GB
Crucial Technology BL4G24C16U4B.8FE 4GB
Crucial Technology BL4G24C16U4B.8FE 4GB
内存RAM
Crucial Technology CT25664AA800.M16FM 2GB
Crucial Technology CT25664AA800.M16FM 2GB
Micron Technology 8ATF1G64AZ-2G1B1 8GB
Micron Technology 8ATF1G64AZ-2G1B1 8GB
内存RAM
G Skill Intl F5-6400J3239G16G 16GB
G Skill Intl F5-6400J3239G16G 16GB
G Skill Intl F4-2400C15-4GIS 4GB
G Skill Intl F4-2400C15-4GIS 4GB
内存RAM
Samsung M471B5173QH0-YK0 4GB
Samsung M471B5173QH0-YK0 4GB
Corsair CMU16GX4M2D3200C16 8GB
Corsair CMU16GX4M2D3200C16 8GB
内存RAM
Samsung M395T2863QZ4-CF76 1GB
Samsung M395T2863QZ4-CF76 1GB
AMD R748G2400S2S 8GB
AMD R748G2400S2S 8GB
内存RAM
Samsung M3 78T3354BZ0-CCC 256MB
Samsung M3 78T3354BZ0-CCC 256MB
G Skill Intl F4-4400C19-8GTZKK 8GB
G Skill Intl F4-4400C19-8GTZKK 8GB
内存RAM
Samsung M393B1K70CH0-CH9 8GB
Samsung M393B1K70CH0-CH9 8GB
Crucial Technology CT8G4DFD8213.C16FAD1 8GB
Crucial Technology CT8G4DFD8213.C16FAD1 8GB
内存RAM
Samsung M3 78T5663RZ3-CF7 2GB
Samsung M3 78T5663RZ3-CF7 2GB
Shenzhen Micro Innovation Industry PSD41626D19P1 16GB
Shenzhen Micro Innovation Industry PSD41626D19P1 16GB
内存RAM
Corsair CM2X2048-6400C5 2GB
Corsair CM2X2048-6400C5 2GB
G Skill Intl F4-3200C16-8GTZKY 8GB
G Skill Intl F4-3200C16-8GTZKY 8GB
内存RAM
G Skill Intl F3-14900CL8-4GBXM 4GB
G Skill Intl F3-14900CL8-4GBXM 4GB
Corsair CMSO16GX4M1A2133C15 16GB
Corsair CMSO16GX4M1A2133C15 16GB
内存RAM
A-DATA Technology DDR3 1600 4GB
A-DATA Technology DDR3 1600 4GB
Dust Leopard DDR4-2400 C17 4GB 4GB
Dust Leopard DDR4-2400 C17 4GB 4GB
内存RAM
Hynix Semiconductor (Hyundai Electronics) HMT41GS6MFR8A-PB 8GB
Hynix Semiconductor (Hyundai Electronics) HMT41GS6MFR8A
Corsair CM4X16GE2400C14K4 16GB
Corsair CM4X16GE2400C14K4 16GB
内存RAM
Hynix Semiconductor (Hyundai Electronics) HMT41GU6BFR8C-PB 8GB
Hynix Semiconductor (Hyundai Electronics) HMT41GU6BFR8C
A-DATA Technology AO1P29KC8T1-BY9SSB 8GB
A-DATA Technology AO1P29KC8T1-BY9SSB 8GB
内存RAM