Crucial Technology CT25664AA800.M16FM 2GB vs Samsung M471A2K43EB1-CWE 16GB

总分

Crucial Technology CT25664AA800.M16FM 2GB

Crucial Technology CT25664AA800.M16FM 2GB

总分

Samsung M471A2K43EB1-CWE 16GB

Samsung M471A2K43EB1-CWE 16GB

差异规格评论

差异

Crucial Technology CT25664AA800.M16FM 2GB

需要考虑的原因
Crucial Technology CT25664AA800.M16FM 2GB

报告一个错误

低于PassMark测试中的延时，ns

51 55

左右 7% 更低的延时
更快的读取速度，GB/s

5 15.8

测试中的平均数值
更快的写入速度，GB/s

2,135.0 13.8

测试中的平均数值

Samsung M471A2K43EB1-CWE 16GB

需要考虑的原因
Samsung M471A2K43EB1-CWE 16GB

报告一个错误

更高的内存带宽，mbps

25600 6400

左右 4 更高的带宽

规格

完整的技术规格清单

Crucial Technology CT25664AA800.M16FM 2GB

Samsung M471A2K43EB1-CWE 16GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

51 55
读取速度，GB/s

5,021.4 15.8
写入速度，GB/s

2,135.0 13.8
内存带宽，mbps

6400 25600

Other

描述

PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6 PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 24
时序/时钟速度

5-5-5-15 / 800 MHz 20-20-20, 22-22-22, 24-24-24 / 3200 MHz
排名PassMark (越多越好)

855 2701

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

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RAM 2

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Absolute Latency

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最新比较

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Crucial Technology CT16G4SFRA32A.C16FJ 16GB

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SanMax Technologies Inc. SMD4-U16G48MJ-32AA 16GB

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Hexon Technology Pte Ltd HEXON 1GB

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Corsair CMD64GX4M4B2800C14 16GB

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Micron Technology 8ATF2G64HZ-3G2E2 16GB

Kingston HP32D4S2S1ME-8 8GB

Kingston HP32D4S2S1ME-8 8GB

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Avant Technology W641GU67J7240N8 8GB

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Corsair CM5S16GM4800A40K2 16GB

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Corsair CMK32GX5M2B5200C40 16GB

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Kingston 9965525-155.A00LF 8GB

Corsair CMK64GX4M2A2666C16 32GB

Corsair CMK64GX4M2A2666C16 32GB