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Crucial Technology CT25664BA1339.M8FK 2GB
Kingston 9905403-174.A00LF 2GB
比较
Crucial Technology CT25664BA1339.M8FK 2GB vs Kingston 9905403-174.A00LF 2GB
总分
Crucial Technology CT25664BA1339.M8FK 2GB
总分
Kingston 9905403-174.A00LF 2GB
差异
规格
评论
差异
需要考虑的原因
Crucial Technology CT25664BA1339.M8FK 2GB
报告一个错误
需要考虑的原因
Kingston 9905403-174.A00LF 2GB
报告一个错误
低于PassMark测试中的延时,ns
24
26
左右 -8% 更低的延时
更快的读取速度,GB/s
14.2
13.6
测试中的平均数值
更快的写入速度,GB/s
9.5
7.6
测试中的平均数值
规格
完整的技术规格清单
Crucial Technology CT25664BA1339.M8FK 2GB
Kingston 9905403-174.A00LF 2GB
主要特点
存储器类型
DDR3
DDR3
PassMark中的延时,ns
26
24
读取速度,GB/s
13.6
14.2
写入速度,GB/s
7.6
9.5
内存带宽,mbps
10600
10600
Other
描述
PC3-10600, 1.5V, CAS Supported: 5 6 7 8 9 10
PC3-10600, 1.5V, CAS Supported: 6 7 8 9
时序/时钟速度
7-7-7-20 / 1333 MHz
7-7-7-20 / 1333 MHz
排名PassMark (越多越好)
1916
2222
Crucial Technology CT25664BA1339.M8FK 2GB RAM的比较
SK Hynix HMT325U6CFR8C-H9 2GB
Kingston 9905403-174.A00LF 2GB RAM的比较
Hynix Semiconductor (Hyundai Electronics) HMT125U6TFR8C-H9 2GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
Crucial Technology CT25664BA1339.M8FK 2GB
Kingston 9905403-174.A00LF 2GB
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Team Group Inc. Team-Elite-1333 4GB
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Kingston 9905403-011.A03LF 2GB
Corsair CMW64GX4M4Z2933C16 16GB
Micron Technology 8ATF2G64HZ-3G2E2 16GB
Crucial Technology CT8G4SFD8213.C16FDD2 8GB
A-DATA Technology AM2U16BC4P2-B05B 4GB
EVGA 16G-D4-2400-MR 8GB
A-DATA Technology AM2U16BC4P2-B05B 4GB
Crucial Technology BLS8G4S240FSDK.8FD 8GB
G Skill Intl F3-2133C9-4GAB 4GB
Crucial Technology CT8G4DFD824A.C16FBD2 8GB
Samsung M391B5673EH1-CH9 2GB
Samsung M471A2K43DB1-CTD 16GB
Team Group Inc. UD5-6400 16GB
Transcend Information JM2666HLE-16G 16GB
Samsung M393B1K70CH0-CH9 8GB
Crucial Technology CT8G4DFRA32A.C8FP 8GB
报告一个错误
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