Crucial Technology CT25664BA160B.C8FE 2GB vs Crucial Technology CT51264BA1339.D16F 4GB

总分

Crucial Technology CT25664BA160B.C8FE 2GB

Crucial Technology CT25664BA160B.C8FE 2GB

总分

Crucial Technology CT51264BA1339.D16F 4GB

Crucial Technology CT51264BA1339.D16F 4GB

差异规格评论

差异

Crucial Technology CT25664BA160B.C8FE 2GB

需要考虑的原因
Crucial Technology CT25664BA160B.C8FE 2GB

报告一个错误

低于PassMark测试中的延时，ns

25 39

左右 36% 更低的延时
更快的读取速度，GB/s

15.8 13.2

测试中的平均数值
更快的写入速度，GB/s

8.8 8.2

测试中的平均数值
更高的内存带宽，mbps

12800 10600

左右 1.21% 更高的带宽

Crucial Technology CT51264BA1339.D16F 4GB

需要考虑的原因
Crucial Technology CT51264BA1339.D16F 4GB

报告一个错误

规格

完整的技术规格清单

Crucial Technology CT25664BA160B.C8FE 2GB

Crucial Technology CT51264BA1339.D16F 4GB

主要特点

存储器类型

DDR3 DDR3
PassMark中的延时，ns

25 39
读取速度，GB/s

15.8 13.2
写入速度，GB/s

8.8 8.2
内存带宽，mbps

12800 10600

Other

描述

PC3-12800, 1.5V, CAS Supported: 5 6 7 8 9 10 11 PC3-10600, 1.5V, CAS Supported: 5 6 7 8 9 10
时序/时钟速度

9-9-9-24 / 1600 MHz 7-7-7-20 / 1333 MHz
排名PassMark (越多越好)

2119 2165

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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Micron Technology 8ATF51264AZ-2G1AY 4GB

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Samsung M471B5773DH0-CK0 2GB

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SK Hynix HMA425S6AFR6N-UH 2GB

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AMD R5S38G1601U2S 8GB

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