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Crucial Technology CT2K102464BD160B 8GB
Micron Technology 8G2666CL19 8GB

Crucial Technology CT2K102464BD160B 8GB vs Micron Technology 8G2666CL19 8GB

总分
star star star star star
Crucial Technology CT2K102464BD160B 8GB

Crucial Technology CT2K102464BD160B 8GB

总分
star star star star star
Micron Technology 8G2666CL19 8GB

Micron Technology 8G2666CL19 8GB

差异 规格 评论

差异

Crucial Technology CT2K102464BD160B 8GB 需要考虑的原因
Crucial Technology CT2K102464BD160B 8GB
报告一个错误
Micron Technology 8G2666CL19 8GB 需要考虑的原因
Micron Technology 8G2666CL19 8GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    30 left arrow 38
    左右 -27% 更低的延时
  • 更快的读取速度，GB/s
    16.5 left arrow 15.6
    测试中的平均数值
  • 更快的写入速度，GB/s
    13.3 left arrow 9.8
    测试中的平均数值
  • 更高的内存带宽，mbps
    21300 left arrow 12800
    左右 1.66 更高的带宽

规格

完整的技术规格清单
Crucial Technology CT2K102464BD160B 8GB
Micron Technology 8G2666CL19 8GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    38 left arrow 30
  • 读取速度，GB/s
    15.6 left arrow 16.5
  • 写入速度，GB/s
    9.8 left arrow 13.3
  • 内存带宽，mbps
    12800 left arrow 21300
Other
  • 描述
    PC3-12800, 1.5V, 1.35V , CAS Supported: 6 7 8 9 10 11 left arrow PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
  • 时序/时钟速度
    9-9-9-24 / 1600 MHz left arrow 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
  • 排名PassMark (越多越好)
    2566 left arrow 3040

Crucial Technology CT2K102464BD160B 8GB RAM的比较

A-DATA Technology AE4S240038G17-BHYA 8GB
INTENSO M418039 8GB

Micron Technology 8G2666CL19 8GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
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最新比较

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Crucial Technology CT2K102464BD160B 8GB
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Micron Technology 8G2666CL19 8GB
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内存RAM
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内存RAM
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
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内存RAM
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Samsung 1600 CL10 Series 8GB
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内存RAM
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Kingston ACR512X64D3S13C9G 4GB
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内存RAM
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内存RAM
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内存RAM
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内存RAM
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内存RAM
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