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Crucial Technology CT2K102464BD160B 8GB
Micron Technology 9905625-004.A03LF 8GB

Crucial Technology CT2K102464BD160B 8GB vs Micron Technology 9905625-004.A03LF 8GB

总分
star star star star star
Crucial Technology CT2K102464BD160B 8GB

Crucial Technology CT2K102464BD160B 8GB

总分
star star star star star
Micron Technology 9905625-004.A03LF 8GB

Micron Technology 9905625-004.A03LF 8GB

差异 规格 评论

差异

Crucial Technology CT2K102464BD160B 8GB 需要考虑的原因
Crucial Technology CT2K102464BD160B 8GB
报告一个错误
Micron Technology 9905625-004.A03LF 8GB 需要考虑的原因
Micron Technology 9905625-004.A03LF 8GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    26 left arrow 38
    左右 -46% 更低的延时
  • 更快的读取速度，GB/s
    17.4 left arrow 15.6
    测试中的平均数值
  • 更快的写入速度，GB/s
    11.7 left arrow 9.8
    测试中的平均数值
  • 更高的内存带宽，mbps
    19200 left arrow 12800
    左右 1.5 更高的带宽

规格

完整的技术规格清单
Crucial Technology CT2K102464BD160B 8GB
Micron Technology 9905625-004.A03LF 8GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    38 left arrow 26
  • 读取速度，GB/s
    15.6 left arrow 17.4
  • 写入速度，GB/s
    9.8 left arrow 11.7
  • 内存带宽，mbps
    12800 left arrow 19200
Other
  • 描述
    PC3-12800, 1.5V, 1.35V , CAS Supported: 6 7 8 9 10 11 left arrow PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
  • 时序/时钟速度
    9-9-9-24 / 1600 MHz left arrow 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
  • 排名PassMark (越多越好)
    2566 left arrow 2806

Crucial Technology CT2K102464BD160B 8GB RAM的比较

A-DATA Technology AE4S240038G17-BHYA 8GB
INTENSO M418039 8GB

Micron Technology 9905625-004.A03LF 8GB RAM的比较

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Smart Modular SH564128FH8NZQNSCG 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

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内存RAM
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内存RAM