Crucial Technology CT51264AC800.C16FC 4GB vs Corsair CMK16GX4M4A2133C13 4GB

总分

Crucial Technology CT51264AC800.C16FC 4GB

Crucial Technology CT51264AC800.C16FC 4GB

总分

Corsair CMK16GX4M4A2133C13 4GB

Corsair CMK16GX4M4A2133C13 4GB

差异规格评论

差异

Crucial Technology CT51264AC800.C16FC 4GB

需要考虑的原因
Crucial Technology CT51264AC800.C16FC 4GB

报告一个错误

更快的读取速度，GB/s

4 14.7

测试中的平均数值
更快的写入速度，GB/s

2,378.6 10.9

测试中的平均数值

Corsair CMK16GX4M4A2133C13 4GB

需要考虑的原因
Corsair CMK16GX4M4A2133C13 4GB

报告一个错误

低于PassMark测试中的延时，ns

38 62

左右 -63% 更低的延时
更高的内存带宽，mbps

17000 6400

左右 2.66 更高的带宽

规格

完整的技术规格清单

Crucial Technology CT51264AC800.C16FC 4GB

Corsair CMK16GX4M4A2133C13 4GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

62 38
读取速度，GB/s

4,670.6 14.7
写入速度，GB/s

2,378.6 10.9
内存带宽，mbps

6400 17000

Other

描述

PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6 PC4-17000, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16
时序/时钟速度

5-5-5-15 / 800 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

861 2824

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

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Absolute Latency

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RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Apacer Technology 78.CAGP7.AZC0B 8GB

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Samsung M3 78T5663RZ3-CE6 2GB

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Kingston KYXC0V-MIH 16GB

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Samsung M378T5663QZ3-CF7 2GB

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AMD R7416G2133U2S 16GB

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Kingston MSI26D4S9S8ME-8 8GB

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Kingston KVR800D2N6/2G 2GB

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G Skill Intl F4-3200C16-8GVSB 8GB

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Samsung DDR3 8GB 1600MHz 8GB

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Corsair CMK32GX4M4D3600C18 8GB

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AMD R5S38G1601U2S 8GB

AMD R5S38G1601U2S 8GB

Galaxy Microsystems Ltd. GALAX GOC 2016 8GB

Galaxy Microsystems Ltd. GALAX GOC 2016 8GB

SK Hynix HYMP512S64CP8-Y5 1GB

SK Hynix HYMP512S64CP8-Y5 1GB

Kingston 9905713-017.A00G 4GB

Kingston 9905713-017.A00G 4GB

Samsung M4 70T2953EZ3-CE6 1GB

Samsung M4 70T2953EZ3-CE6 1GB

Crucial Technology BLS16G4D32AESE.M16FE 16GB

Crucial Technology BLS16G4D32AESE.M16FE 16GB

SK Hynix HMT325S6BFR8C-H9 2GB

SK Hynix HMT325S6BFR8C-H9 2GB

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Corsair CMW16GX4M2Z2933C16 8GB