Crucial Technology CT51264AC800.C16FC 4GB vs Crucial Technology CT16G4DFD8266.C16FE 16GB

总分

Crucial Technology CT51264AC800.C16FC 4GB

Crucial Technology CT51264AC800.C16FC 4GB

总分

Crucial Technology CT16G4DFD8266.C16FE 16GB

Crucial Technology CT16G4DFD8266.C16FE 16GB

差异规格评论

差异

Crucial Technology CT51264AC800.C16FC 4GB

需要考虑的原因
Crucial Technology CT51264AC800.C16FC 4GB

报告一个错误

更快的读取速度，GB/s

4 16.6

测试中的平均数值
更快的写入速度，GB/s

2,378.6 13.7

测试中的平均数值

Crucial Technology CT16G4DFD8266.C16FE 16GB

需要考虑的原因
Crucial Technology CT16G4DFD8266.C16FE 16GB

报告一个错误

低于PassMark测试中的延时，ns

32 62

左右 -94% 更低的延时
更高的内存带宽，mbps

21300 6400

左右 3.33 更高的带宽

规格

完整的技术规格清单

Crucial Technology CT51264AC800.C16FC 4GB

Crucial Technology CT16G4DFD8266.C16FE 16GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

62 32
读取速度，GB/s

4,670.6 16.6
写入速度，GB/s

2,378.6 13.7
内存带宽，mbps

6400 21300

Other

描述

PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6 PC4-21300, 1.2V, CAS Supported: 10 12 13 14 15 16 17 18 19 20
时序/时钟速度

5-5-5-15 / 800 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

861 3357

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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Apacer Technology GD2.1542WS.003 8GB

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Ramos Technology EWB8GB681CA3-16IC 8GB

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Micron Technology 16GB 2133MHz DIMM 16GB

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Crucial Technology CT51264AC800.C16FC 4GB

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Team Group Inc. TEAMGROUP-D4-3600 4GB

PNY Electronics PNY 2GB

PNY Electronics PNY 2GB

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Gold Key Technology Co Ltd NMUD480E82-3200D 8GB

STEC (Silicon Tech) S1024R3NN2QK-I 1GB

STEC (Silicon Tech) S1024R3NN2QK-I 1GB

Corsair CMWX8GD3600C18W2D 8GB

Corsair CMWX8GD3600C18W2D 8GB

Crucial Technology BLT16G4D30AETA.K16FB 16GB

Crucial Technology BLT16G4D30AETA.K16FB 16GB

Samsung M471A1K43BB0-CPB 8GB

Samsung M471A1K43BB0-CPB 8GB

A-DATA Technology DQVE1908 512MB

A-DATA Technology DQVE1908 512MB

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SK Hynix HMA851S6DJR6N-VK 4GB